FZ400R33KL2CB5NOSA1 datasheet, PDF

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FZ400R33KL2CB5NOSA1: DescriptionMOD IGBT MED PWR A-IHV73-6; CategoryDiscrete semiconductor The transistor; File Size300KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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FZ400R33KL2CB5NOSA1 Overview

MOD IGBT MED PWR A-IHV73-6

FZ400R33KL2CB5NOSA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	MODULE-5
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	36 weeks
Shell connection	ISOLATED
Maximum collector current (IC)	750 A
Collector-emitter maximum voltage	3300 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X5
Number of components	1
Number of terminals	5
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	4250 ns
Nominal on time (ton)	1400 ns
Base Number Matches	1

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FZ400R33KL2C_B5

IGBT,Wechselrichter/IGBT,Inverter

HöchstzulässigeWerte/MaximumRatedValues

Kollektor-Emitter-Sperrspannung

Collector-emittervoltage

Kollektor-Dauergleichstrom

ContinuousDCcollectorcurrent

PeriodischerKollektor-Spitzenstrom

Repetitivepeakcollectorcurrent

Gate-Emitter-Spitzenspannung

Gate-emitterpeakvoltage

= 25°C

= -25°C

= 80°C, T

vj max

= 150°C

= 25°C, T

vj max

= 150°C

= 1 ms

CES

3300

400

750

800

+/-20

min.

= 25°C

= 125°C

CE sat

GEth

Gint

ies

res

CES

GES

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

d on

1,00

0,40

3,70

3,90

0,25

0,35

900

1200

440

600

4,20

typ.

3,00

3,70

5,10

7,50

1,3

48,0

2,70

5,0

400

max.

3,65

4,45

6,00

µC

Ω

µs

VorläufigeDaten/PreliminaryData

C nom

CRM

GES

CharakteristischeWerte/CharacteristicValues

Kollektor-Emitter-Sättigungsspannung

Collector-emittersaturationvoltage

Gate-Schwellenspannung

Gatethresholdvoltage

Gateladung

Gatecharge

InternerGatewiderstand

Internalgateresistor

Eingangskapazität

Inputcapacitance

Rückwirkungskapazität

Reversetransfercapacitance

Kollektor-Emitter-Reststrom

Collector-emittercut-offcurrent

Gate-Emitter-Reststrom

Gate-emitterleakagecurrent

Einschaltverzögerungszeit,induktiveLast

Turn-ondelaytime,inductiveload

Anstiegszeit,induktiveLast

Risetime,inductiveload

Abschaltverzögerungszeit,induktiveLast

Turn-offdelaytime,inductiveload

Fallzeit,induktiveLast

Falltime,inductiveload

EinschaltverlustenergieproPuls

Turn-onenergylossperpulse

AbschaltverlustenergieproPuls

Turn-offenergylossperpulse

Kurzschlußverhalten

SCdata

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

= 400 A, V

= 15 V

= 400 A, V

= 15 V

= 40,0 mA, V

= V

, T

= 25°C

= -15 V ... +15 V, V

= 1800V

= 25°C

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

= 3300 V, V

= 0 V, T

= 25°C

= 0 V, V

= 20 V, T

= 25°C

= 400 A, V

= 1800 V

= ±15 V

Gon

= 13

Ω,

= 100 nF

= 400 A, V

= 1800 V

= ±15 V

Gon

= 13

Ω,

= 100 nF

= 400 A, V

= 1800 V

= ±15 V

Goff

= 13

Ω,

= 100 nF

= 400 A, V

= 1800 V

= ±15 V

Goff

= 13

Ω,

= 100 nF

= 400 A, V

= 1800 V, L

= 60 nH

= ±15 V, di/dt = 3000 A/µs

Gon

= 6,2

Ω,

= 100 nF

= 400 A, V

= 1800 V, L

= 60 nH

= ±15 V

Goff

= 13

Ω,

= 100 nF

≤

15 V, V

= 2500 V

CEmax

= V

CES

-L

sCE

·di/dt

proIGBT/perIGBT

d off

off

thJC

thCH

vj op

-40

≤

10 µs, T

= 125°C

1800

25,5 K/kW

Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT

Thermalresistance,casetoheatsink

Paste

=1W/(m·K)/λ

grease

=1W/(m·K)

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

24,0

125

K/kW

°C

Datasheet

V2.1

2018-01-15

FZ400R33KL2CB5NOSA1 Related Products

	FZ400R33KL2CB5NOSA1	FZ400R33KL2C_B5
Description	MOD IGBT MED PWR A-IHV73-6	IGBT Modules N-CH 3.3KV 750A
Is it Rohs certified?	incompatible	incompatible
Maker	Infineon	Infineon
package instruction	MODULE-5	MODULE-5
Reach Compliance Code	not_compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	750 A	750 A
Collector-emitter maximum voltage	3300 V	3300 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X5	R-XUFM-X5
Number of components	1	1
Number of terminals	5	5
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	4250 ns	4250 ns
Nominal on time (ton)	1400 ns	1400 ns
Base Number Matches	1	1

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