LS5018
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5018
The LS5018 is a single P-Channel JFET switch
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
The SOT-23 package provides ease of manufacturing,
and a lower cost assembly option.
(See Packaging Information).
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5018
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
r
DS(on)
≤ 75Ω
Maximum Temperatures
Storage Temperature
‐55°C to +200°C
Low Insertion Loss
Operating Junction Temperature
‐55°C to +200°C
No offset or error voltage generated by closed
Maximum Power Dissipation
switch
Continuous Power Dissipation
500mW
Purely resistive
MAXIMUM CURRENT
LS5018 Applications:
Gate Current (Note 1)
I
G
= ‐50mA
Analog Switches
MAXIMUM VOLTAGES
Commutators
Gate to Drain Voltage
V
GDS
= 30V
Choppers
Gate to Source Voltage
V
GSS
= 30V
LS5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage
30
‐‐
‐‐
I
G
= 1µA, V
DS
= 0V
V
V
GS(off)
Gate to Source Cutoff Voltage
‐‐
‐‐
10
V
DS
= ‐15V, I
D
= ‐1µA
V
DS(on)
Drain to Source On Voltage
‐‐
‐‐
‐0.5
V
GS
= 0V, I
D
= ‐6mA
I
DSS
Drain to Source Saturation Current (Note 2)
‐10
‐‐
‐‐
mA
V
DS
= ‐20V, V
GS
= 0V
I
GSS
Gate Reverse Current
‐‐
‐‐
2
nA
V
GS
= 15V, V
DS
= 0V
I
D(off)
Drain Cutoff Current
‐‐
‐‐
‐10
V
DS
= ‐15V, V
GS
= 12V
‐‐
‐‐
‐10
µA
V
DS
= ‐15V, V
GS
= 7V
I
DGO
Drain Reverse Current
‐‐
‐‐
‐2
nA
V
DG
= ‐15V, I
S
= 0A
r
DS(on)
Drain to Source On Resistance
‐‐
‐‐
75
Ω
I
D
= ‐1mA, V
GS
= 0V
LS5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
r
DS(on)
Drain to Source On Resistance
‐‐
‐‐
75
Ω
I
D
= 0A, V
GS
= 0V, f = 1kHz
C
iss
Input Capacitance
‐‐
‐‐
45
pF
V
DS
= ‐15V, V
GS
= 0V, f = 1MHz
C
rss
Reverse Transfer Capacitance
‐‐
‐‐
10
V
DS
= 0V, V
GS
= 12V, f = 1MHz
LS5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
LS5018 Benefits:
Click To Buy
Turn On Time
Turn On Rise Time
Turn Off Time
Turn Off Fall Time
15
20
15
50
ns
V
GS
(L) = 12V
V
GS
(H) = 0V
See Switching Circuit
LS5018 in SOT-23
LS5018 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
t
d(on)
t
r
t
d(off)
t
f
SWITCHING TEST CIRCUIT
LS5018 SWITCHING CIRCUIT PARAMETERS
SOT-23 (Top View)
V
DD
‐6V
Available Packages:
V
GG
12V
R
L
910Ω
R
G
220Ω
I
D(on)
‐6mA
Micross Components Europe
Note 1 ‐ Absolute maximum ratings are limiting values above which LS5018 serviceability may be impaired.
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Embedded System
京公网安备 11010802033920号
EEWORLD
