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BF723TA

Description
Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
CategoryThe transistor   
File Size49KB,1 Pages
ManufacturerDiodes Incorporated
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BF723TA Overview

Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

BF723TA Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1

BF723TA Related Products

BF723TA BF723
Description Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Maker Diodes Incorporated Diodes Incorporated
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.05 A 0.05 A
Collector-emitter maximum voltage 250 V 250 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
Base Number Matches 1 1
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