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IRF6100

Description
MOSFET P-CH 20V 5.1A FLIP-FET
Categorysemiconductor    Discrete semiconductor   
File Size635KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IRF6100 Overview

MOSFET P-CH 20V 5.1A FLIP-FET

IRF6100 Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C5.1A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)2.5V,4.5V
Rds On (maximum value) when different Id, Vgs65 milliohms @ 5.1A, 4.5V
Vgs (th) (maximum value) when different Id1.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)21nC @ 5V
Vgs (maximum value)±12V
Input capacitance (Ciss) at different Vds (maximum value)1230pF @ 15V
FET function-
Power dissipation (maximum)2.2W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packaging4-FlipFet™
Package/casing4-FlipFet™
PD - 93930F
IRF6100
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low
R
DS(on)
per Footprint Area
Low
Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
V
DSS
-20V
R
DS(on)
max
0.065
@V
GS
= -4.5V
0.095
@V
GS
= -2.5V
I
D
-5.1A
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for,
provides the designer with an ex-
D
G
S
FlipFET
™
ISOMETRIC
tremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET™ the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current

Power Dissipation
ƒ
Power Dissipation
ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJ-PCB
Parameter
Junction-to-Ambient
ƒ
Junction-to-PCB mounted
Typ.
35
Max.
56.5
–––
Units
°C/W
www.irf.com
1
07/13/06
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