15 A Low-Side RF MOSFET Driver
Features
High Peak Output Current
Low Output Impedance
Low Quiescent Supply Current
Low Propagation Delay
High Capacitive Load Drive Capability
Wide Operating Voltage Range
IXRFD615
Description
The IXRFD615 is a CMOS high
-speed, high-current gate driver
specifically designed to drive
MOSFETs in Class D and E HF
RF applications as well as other
applications requiring ultrafast
rise and fall times or short mini-
mum pulse widths. The
IXRFD615 can source and sink 15 A of peak current
while producing voltage rise and fall times of less than
5 ns and minimum pulse widths of 8 ns. The input of
the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range.
Designed with small internal delays, cross conduction
or current shoot-through is virtually eliminated. The
features and wide safety margin in operating voltage
and power make the IXRFD615 unmatched in perfor-
mance and value.
The surface mount IXRFD615 is packaged in a low-
inductance RF package incorporating advanced layout
techniques to minimize stray lead inductances for opti-
mum switching performance.
Applications
RF MOSFET Driver
Class D and E RF Generators
Multi-MHz Switch Mode Supplies
Pulse Transformer Driver
Pulse Laser Diode Driver
Pulse Generator
Fig. 1- Block Diagram and Truth Table
IN
OUT
0
1
0
1
1
15 A Low-Side RF MOSFET Driver
Absolute Maximum Ratings
Parameter
Supply Voltage V
CC
Input Voltage Level V
IN
All Other Pins
Power Dissipation
T
A (AMBIENT)
≤ 25C
T
C (CASE)
≤ 25C
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
IXRFD615
Value
150°C
-40°C to 85° C
0.25° C/W
Value
30V
-5V to V
CC
+ 0.3V
-0.3V to V
CC
+0.3V
2W
100W
Note: 1
-40°C to 150°C
300°C
Parameter
Maximum Junction Temperature
Operating Temperature Range
Thermal Impedance (Junction to Case)
R
ӨJC
Moisture Sensitivity Level (MSL)
1
Note:
Operating the device outside of the “Absolute Maximum Rat-
ings” may cause permanent damage. Typical values indicate conditions
for which the device is intended to be functional but do not guarantee
specific performance limits. The guaranteed specifications apply only for
the test conditions listed. Exposure to absolute maximum conditions for
extended periods may impact device reliability.
Electrical Characteristics
Note: 1-
Limited by high frequency performance, not package dissipa-
tion.
Unless otherwise noted, T
A
= 25° C, 8V < V
CC
< 30V.
All voltage measurements with respect to GND. IXRFD615 configured as described in
Test Conditions.
Symbol
V
IH
V
IL
V
HYS
V
IN
I
IN
V
OH
V
OL
R
OH
R
OL
I
PEAK
I
DC
t
R
t
F
t
ONDLY
t
OFFDLY
PW
min
V
CC
I
CC
Parameter
High input voltage
Low input voltage
Input hysteresis
Input voltage range
Input current
High output voltage
Low output voltage
High output resistance
Low output resistance
Peak output current
Continuous output current
Rise time
Fall time
ON propagation delay
OFF propagation delay
Test Conditions
8V ≤ V
CC
≤ 18V
8V ≤ V
CC
≤ 18V
Min
3.5
Typ
Max
Units
V
0.8
0.25
-5
V
CC
+ 0.3
10
V
V
V
µA
V
V
Ω
Ω
A
A
ns
ns
ns
ns
ns
ns
0V≤ V
IN
≤V
CC
-10
V
CC -
0.025
0.42
0.22
15
2.5
4
5
4
5.5
25
22
0.025
V
CC
= 15V I
OUT
= 100mA
V
CC
= 15V I
OUT
= 100mA
V
CC
= 15V
Limited by package power dissipation
V
CC
=15V C
L
=1nF
C
L
=2nF
V
CC
=15V C
L
=1nF
C
L
=2nF
V
CC
=15V C
L
=2nF
V
CC
=15V C
L
=2nF
Minimum pulse width
Power supply voltage
Power supply current
FWHM V
CC
=15V C
L
=1nF
Recommended
V
CC
= 15V, V
IN
= 0V
V
CC
= 15V, V
IN
= 3.5V
V
CC
= 15V, V
IN
= V
CC
8
8
15
0.4
3.8
0.4
18
1
5
1
ns
V
mA
mA
mA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and
assembling.
All specifications are subject to change at any time without notice.
2
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