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STU5N95K5

Description
MOSFET N-CHANNEL 950V 3.5A IPAK
Categorysemiconductor    Discrete semiconductor   
File Size922KB,26 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STU5N95K5 Overview

MOSFET N-CHANNEL 950V 3.5A IPAK

STU5N95K5 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)950V
Current - Continuous Drain (Id) at 25°C3.5A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs2.5 ohms @ 1.5A, 10V
Vgs (th) (maximum value) when different Id5V @ 100µA
Gate charge (Qg) at different Vgs (maximum value)12.5nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)220pF @ 100V
FET function-
Power dissipation (maximum)70W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingI-PAK
Package/casingTO-251-3 short lead, IPak, TO-251AA
STD5N95K5, STF5N95K5,
STP5N95K5, STU5N95K5
N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
Datasheet - production data
TAB
2 3
1
Features
Order code
STD5N95K5
STF5N95K5
950 V
STP5N95K5
STU5N95K5
3
V
DS
R
DS(on)
max.
I
D
P
tot
70 W
DPAK
TAB
2
3
2.5 Ω
25 W
3.5 A
70 W
70 W
1
TO-220FP
TAB
1
2
TO-220
1
2
3
IPAK
Industry’s lowest R
DS(on)
x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Figure 1: Internal schematic diagram
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
STD5N95K5
STF5N95K5
STP5N95K5
STU5N95K5
5N95K5
Marking
Package
DPAK
TO-220FP
TO-220
IPAK
Tube
Packing
Tape and reel
January 2017
DocID024639 Rev 4
1/26
www.st.com
This is information on a product in full production.

STU5N95K5 Related Products

STU5N95K5 STD5N95K5 STF5N95K5
Description MOSFET N-CHANNEL 950V 3.5A IPAK Drain-source voltage (Vdss): 950V Continuous drain current (Id) (at 25°C): 3.5A (Tc) Gate-source threshold voltage: 5V @ 100uA Drain-source on-resistance: 2.5Ω @ 1.5A, 10V max Power dissipation (Ta=25°C): 70W(Tc) Type: N-channel Drain-source voltage (Vdss): 950V Continuous drain current (Id) (at 25°C): 3.5A (Tc) Gate-source threshold voltage: 5V @ 100uA Drain-source on-resistance: 2.5Ω @ 1.5A, 10V max Power dissipation (Ta=25°C): 3.5A (Tc) Type: N-channel N-channel, 950V, 3.5A, 2.5Ω@10V
Drain-source voltage (Vdss) 950V 950V 950V
Continuous drain current (Id) at 25°C - 3.5A(Tc) 3.5A(Tc)
Gate-source threshold voltage - 5V @ 100uA 5V @ 100uA
Drain-source on-resistance - 2.5Ω @ 1.5A,10V 2.5Ω @ 1.5A,10V
Maximum power dissipation (Ta=25°C) - 70W(Tc) 3.5A(Tc)
type - N channel N channel
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