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1N4937 BK

Description
DIODE GEN PURP 600V 1A DO41
Categorysemiconductor    Discrete semiconductor   
File Size102KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

1N4937 BK Overview

DIODE GEN PURP 600V 1A DO41

1N4937 BK Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.2V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)200ns
Current at different Vr - Reverse leakage current5µA @ 600V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingDO-204AL, DO-41, axial
Supplier device packagingDO-41
Operating Temperature - Junction-
Rectifiers, Fast Recovery
1.0 to 6.0 Amperes
50 to 1200 Volts
IO (AMPS)
@TA (
o
C)
IFSM (AMPS)
75
30
55
50
1.0
55
50
75
50
80
50
CASE
VRRM (VOLTS)
50
100
200
400
600
800
1000
1200
VF MAX @ IF =IO
IR MAX @ VRRM
trr (50V thru 400V)
trr (600V)
trr (800V)
trr (1000V)
trr (1200V)
DO-41*
GPR-1A*
DO-41*
1N4933
1N4934
1N4935
1N4936
1N4937
1N4942
1N4944
1N4946
1N4947
1N4948
1N5615
1N5617
1N5619
1N5621
1N5623
CPR1F-010
CPR1F-020
CPR1F-040
CPR1F-060
CPR1F-080
CPR1F-100
CR1F-010
CR1F-020
CR1F-040
CR1F-060
CR1F-080
CR1F-100
CR1F-120
1.2V
1.2
1.3V
1.2V
1.3V
5.0µA
200ns
200ns
1.0µA
150ns
250ns
250ns
500ns
0.5µA
150ns
250ns
300ns
500ns
5.0µA
200ns
200ns
300ns
500ns
5.0µA
150ns
150ns
500ns
500ns
500ns
* Also available in DO-41SP Case (0.6mm lead diameter) with Radial Tape and Reel (DO-41SP-RPCU).
(6-December 2004)
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