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1N483BM

Description
0.2 A, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size263KB,6 Pages
ManufacturerETC
Download Datasheet Parametric View All

1N483BM Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

1N483BM Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHERMETIC SEALED, glass PACKAGE-2
stateTRANSFERRED
packaging shaperound
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.5000 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum average forward current0.2000 A
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