High Conductance
Use Advantages
1N482B
thru
1N4150
1N486B
DO-35 Diodes
Used as a general purpose diode in power supplies, or in clipping and steering
applications. Operation at temperatures up to 200 degrees C, no derating.
Can be used in harsh environments where hermeticity and low cost are
important. Compatible with all major automatic pick and place mounting
equipment. May be used on ceramic boards along with high temperature IR
solder reflow.
Features
Humidity proof glass
Thermally matched system
No thermal fatigue
No applications restrictions
Sigma Bond™ plated contacts
100% guaranteed solderability
Problem free assembly
Six Sigma quality
LL-35 MiniMELF types available
Absolute Maximum Ratings
Average Forward Rectified Current at T
Ambient
= 25
o
C
Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine)
Junction Temperature Range
Storage Temperature Range
Max. Average Power Dissipation
Characteristics
at T =
25
o
C
Peak
Inverse Voltage
(MIN.)
(PIV)
Maximum
Average Rectified
Current
(I
O
)
Maximum
Forward Voltage
Drop
(V
F
) @ 0.1A
D O -35 G lass P ack age
Lead Dia.
0.018-0.022"
0.458-0.558 mm
1.0"
25.4 m m
(M in.)
Leng th
0.120-.200"
3.05-5.08-
mm
Dia.
0.06-0.09"
1.53-2.28 mm
Symbol
I
AV
I
FSM
T
j
T
S
Pdiss
Value
0.65
2.0
-65 to +200
-55 to +200
250
Unit
Amp
Amps
o
o
C
C
mW
Maximum Leakage
Current
(I
R
) @ PIV
25
o
C
10
o
C
5
Minimum
Saturation
Voltage
(@0.1 mA)
Type
1N482B
1N483B
1N484B
1N485B
1N486B
Volts
30
60
125
175
225
Amps
0.2
0.2
0.2
0.2
0.2
Volts
1.0
1.0
1.0
1.0
1.0
µA
0.025
0.025
0.025
0.025
0.025
µA
5
5
5
5
5
Volts
40
80
150
200
250
LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N"..
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Embedded System
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