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SF30CG

Description
3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size188KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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SF30CG Overview

3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD

NOT RECOMMENDED FOR NEW DESIGN
SF30AG - SF30JG
3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
Diffused Junction
Super-Fast Switching for High Efficiency
Surge Overload Rating to 125A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Tin. Plated Leads Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 3
Weight: 1.12 grams (approximate)
DO-201AD
Dim
A
B
C
D
Min
25.40
7.20
1.20
4.80
Max
9.50
1.30
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
A
= 55C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage (Note 5)
Reverse Recovery Time (Note 3)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
JA
T
j,
T
STG
SF30 SF30 SF30 SF30 SF30 SF30 SF30 SF30
AG
BG
CG
DG
FG
GG
HG
JG
50
35
100
70
150
100
200
140
3.0
125
0.95
5.0
100
35
75
32
-65 to +150
40
50
50
1.3
1.5
300
210
400
280
500
350
600
420
Unit
V
V
A
A
V
A
ns
pF
°C/W
C
@ I
F
= 3.0A
@ T
A
= 25C
@ T
A
= 100C
Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Notes 5 and 7.
Short duration pulse test used to minimize self-heating effect.
DS37836 Rev. 1 - 3
1 of 3
www.diodes.com
SF30AG - SF30JG
© Diodes Incorporated

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