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SEN-R-1050-016

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size65KB,4 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

SEN-R-1050-016 Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

SEN-R-1050-016 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage22.1 V
Minimum breakdown voltage20 V
Processing package descriptionDIE-2
stateACTIVE
packaging shapeROUND
Package SizeUNCASED CHIP
surface mountYes
Terminal formNO LEAD
terminal coatingNOT SPECIFIED
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
CraftsmanshipAVALANCHE
structureSINGLE
Diode component materialsSILICON
polarityUNIDIRECTIONAL
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
shutdown voltage18 V
Maximum non-repetitive peak speed power5000 W
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA SHEET 4199, REV. -
SEN-R-1050-XXX
TRANSIENT VOLTAGE SUPPRESSOR 5000 WATT SERIES
GLASS PASSIVATED DIE/CELL
FEATURES
5000W peak pulse power dissipation
Glass passivated junction
Low incremental surge resistance
Excellent clamping capability
Repetition rate (duty cycle): 0.05%
Fast response time: typically less than 1.0 ps
Typical IR less than 1µA above 10V
DESCRIPTION
This is a transient voltage suppressor series
extending from 5.0 volts to 100 volts. It is available
in
either
uni-directional
or
bi-directional
configurations.
The cell version is available in a Type 1
configuration with double tabs. A Type 2
configuration with silicone edge protection
protecting the edge of the die and the die cavity
between the double tabs is also available as a
custom option.
APPLICATIONS
ü
ü
ü
ü
Power Supply Surge Protection
Data Link Surge Protection
Lightning Transient Suppression
Electrostatic Protection
ELECTRICAL CHARACTERISTICS
PARAMETER
Peak Pulse Power
Electrical Parameters
Maximum Solder Temperature
Operating & Storage
Temperature
Tmax
10 Second exposure
Tj, Tstg
-55
SYMBOL
Pppm
Test Conditions
TA = 25
8C,
Tp = 1 ms (Note 1)
Min
5000
TYP
See Table
Max
Unit
Watts
8C
8C
250
175
Note 1: Non-repetitive current pulse, per Fig. 3 and derated above TA = 25
8C
per Fig. 2.
B
D
G
A
C
F
E
CHIP
TVS T1 CELL
TVS T2 CELL
A
B
C
D
E
F
G
220
13.5
277
98
305
277
98
Note 1: All dimension in MIL
Note 2: The dimension is for low voltage parts (<40V) only. The dimension B, D and G will be larger for
high voltage parts (>40V).
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586-7600
Fax (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
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