HS9-4424BRH/PROTO datasheet, PDF

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HS9-4424BRH/PROTO: DescriptionGate Driver RADIATION HARDENED NON INV MOSFET DR W/7.5V LVLO, CLASS V; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size233KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HS9-4424BRH/PROTO Overview

Gate Driver RADIATION HARDENED NON INV MOSFET DR W/7.5V LVLO, CLASS V

HS9-4424BRH/PROTO Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	DFP
package instruction	DFP,
Contacts	16
Reach Compliance Code	compliant
ECCN code	USML XV(E)
high side driver	NO
Interface integrated circuit type	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 code	R-CDFP-F16
JESD-609 code	e0
Number of functions	2
Number of terminals	16
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Nominal output peak current	2 A
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	2.92 mm
Maximum supply voltage	18 V
Minimum supply voltage	12 V
Nominal supply voltage	15 V
surface mount	YES
technology	BICMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Disconnect time	0.25 µs
connection time	0.25 µs
width	6.73 mm
Base Number Matches	1

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DATASHEET

HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH

Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers

The Radiation Hardened HS-4424RH, HS-4424EH,

HS-4424BRH and HS-4424BEH are non-inverting, dual,

monolithic high-speed MOSFET drivers designed to convert TTL

level signals into high current outputs at voltages up to 18V.

The inputs of these devices are TTL compatible and can be

directly driven by our HS-1825ARH PWM device or by our

ACS/ACTS and HCS/HCTS type logic devices. The fast rise

times and high current outputs allow very quick control of high

gate capacitance power MOSFETs in high frequency

applications.

The high current outputs minimize power losses in MOSFETs by

rapidly charging and discharging the gate capacitance. The

output stage incorporates a low voltage lock-out circuit that

puts the outputs into a three-state mode when the supply

voltage drops below 10V for the HS-4424RH, HS-4424EH and

7.5V for the HS-4424BRH, HS-4424BEH.

Constructed with the Intersil dielectrically isolated Rad Hard

Silicon Gate (RSG) BiCMOS process, these devices are immune

to Single Event Latch-up and have been specifically designed

to provide highly reliable performance in harsh radiation

environments.

Specifications for Rad Hard QML devices are controlled by the

Defense Logistics Agency Land and Maritime (DLA). The SMD

numbers listed here must be used when ordering.

Detailed Electrical Specifications for these devices are

contained in SMD

5962-99560.

FN4739

Rev 2.00

September 24, 2013

Features

• Electrically screened to DESC SMD #

5962-99560

• QML qualified per MIL-PRF-38535 requirements

• EH version acceptance tested to 50krad(Si) (LDR)

• Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

- Latch-up immune

- Low dose rate immune

• I

PEAK

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (min)

• Matched rise and fall times (C

= 4300pF) . . . . . . 75ns (max)

• Low voltage lock-out feature

- HS-4424RH, HS-4424EH. . . . . . . . . . . . . . . . . . . . . . < 10.0V

- HS-4424BRH, HS-4424BEH . . . . . . . . . . . . . . . . . . . . < 7.5V

• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V

• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (max)

• Consistent delay times with V

changes

• Low power consumption

- 40mW with inputs high

- 20mW with inputs low

• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)

• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4000V

Applications

• Switching power supplies

• DC/DC converters

• Motor controllers

Pin Configuration

HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH

(FLATPACK CDFP4-F16)

TOP VIEW

IN A

GND A

GND B

IN B

OUT A

OUT B

NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-bonded to their

same electrical points on the die.

FN4739 Rev 2.00

September 24, 2013

Page 1 of 3

HS9-4424BRH/PROTO Related Products

	HS9-4424BRH/PROTO	HS9-4424RH/PROTO
Description	Gate Driver RADIATION HARDENED NON INV MOSFET DR W/7.5V LVLO, CLASS V	Gate driver RADIATION HARDENED DUAL POWER MOSFET DRIVER
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Parts packaging code	DFP	DFP
package instruction	DFP,	DFP,
Contacts	16	16
Reach Compliance Code	compliant	compliant
ECCN code	USML XV(E)	USML XV(E)
high side driver	NO	NO
Interface integrated circuit type	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 code	R-CDFP-F16	R-CDFP-F16
JESD-609 code	e0	e0
Number of functions	2	2
Number of terminals	16	16
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C
Nominal output peak current	2 A	2 A
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP	DFP
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified
Maximum seat height	2.92 mm	2.92 mm
Maximum supply voltage	18 V	18 V
Minimum supply voltage	12 V	12 V
Nominal supply voltage	15 V	15 V
surface mount	YES	YES
technology	BICMOS	BICMOS
Temperature level	MILITARY	MILITARY
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Disconnect time	0.25 µs	0.25 µs
connection time	0.25 µs	0.25 µs
width	6.73 mm	6.73 mm

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