SHANGHAI SUNRISE ELECTRONICS CO., LTD.
1N4933G THRU 1N4937G
GLASS PASSIVATED
FAST RECOVERY RECTIFIER
VOLTAGE: 50 TO 600V CURRENT: 1.0A
FEATURES
• Molded case feature for auto insertion
• Glass passivated chip
• Fast switching for high efficiency
• High current capability
• Low leakage current
• High surge capability
• High temperature soldering guaranteed:
250
o
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
TECHNICAL
SPECIFICATION
DO - 41
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(9.5mm lead length, at T
a
=75
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Forward Voltage
(at rated forward current and 25
o
C)
Maximum DC Reverse Current
T
a
=25
o
C
(at rated DC blocking voltage)
T
a
=100
o
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
1N
1N
1N
1N
1N
UNITS
4933G 4934G 4935G 4936G 4937G
50
100
200
400
600
V
35
70
140
280
420
V
50
100
200
400
600
V
1.0
30.0
1.2
5.0
100
A
A
V
µA
µA
nS
pF
o
200
Maximum Reverse Recovery Time (Note 1)
trr
15.0
C
J
Typical Junction Capacitance
(Note 2)
50.0
R
θ
(ja)
Typical Thermal Resistance
(Note 3)
-65 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition I
F
=1.0A, V
R
=30V
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted
C/W
o
C
http://www.sse-diode.com
Embedded System
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