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1N4948

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size50KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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1N4948 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

1N4942 THRU 1N4948
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage -
200 to 1000 Volts
ED
T
N
0.034 (0.86)
TE
0.028 (0.71)
DIA.
PA
*
DO-204AP
Forward Current -
1. 0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
High temperature metallurgically bonded construction
Hermetically sealed package
Glass passivated cavity-free junction
1.0 Ampere operation
at TA=55°C with no
thermal runaway
Typical I
R
less than 0.1µA
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for high efficiency
High temperature soldering guaranteed:
350°C/10 seconds, 0.375” (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No. 3,930,306
Case:
JEDEC DO-204AP solid glass body
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.02 ounce, 0.56 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
1N4942
1N4944
1N4946
1N4947
1N4948
UNITS
* Maximum recurrent peak reverse voltage
Maximum RMS voltage
* Maximum DC blocking voltage
* Minimum reverse breakdown voltage at 50µA
* Maximum average forward rectified current
0.375” (9.5mm) lead length at T
A
=55°C
* Peak forward surge current
8.3ms single halt sine-wave superimposed
on rated load (JEDEC Method)
* Maximum instantaneous forward voltage at: 1.0A
at 2.0A, T
A
=-40°C
* Maximum DC reverse current
at Rated DC blocking voltage
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
* Operating junction and storage temperature range
T
A
=25°C
T
A
=175°C
V
RRM
V
RMS
V
DC
V
(BR)
l
(AV)
200
140
200
220
400
280
400
440
600
420
600
660
1.0
800
560
800
880
1000
700
1000
1100
Volts
Volts
Volts
Volts
Amp
I
FSM
25.0
1.3
2.5
1.0
500.0
150
15.0
55.0
-65 to +175
250
500
Amps
V
F
I
R
t
rr
C
J
R
ΘJA
T
J
, T
STG
Volts
µA
ns
pF
°C/W
°C
* Maximum reverse recovery time
(NOTE 1)
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, Irr=25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
4/98

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1N4948 1N4942 1N4944 1N4946 1N4947
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP
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