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IPB107N20N3 G

Description
MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size630KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPB107N20N3 G Overview

MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3

IPB107N20N3 G Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxTO-263-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage200 V
Id-continuous drain current88 A
Rds On - drain-source on-resistance9.6 mOhms
Vgs th-gate-source threshold voltage2 V
Vgs - gate-source voltage20 V
Qg-gate charge87 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 175 C
Pd-power dissipation300 W
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
high4.4 mm
length10 mm
seriesOptiMOS 3
Transistor type1 N-Channel
width9.25 mm
Forward transconductance - minimum71 S
Fall time11 ns
Rise Time26 ns
Factory packaging quantity1000
Typical shutdown delay time41 ns
Typical switch-on delay time18 ns
unit weight4 g
IPB107N20N3 G
IPP110N20N3 G
IPI110N20N3 G
OptiMOS
3 Power-Transistor
TM
Product Summary
V
DS
R
DS(on),max (TO263)
I
D
200
10.7
88
V
mW
A
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB107N20N3 G
IPP110N20N3 G
IPI110N20N3 G
Package
Marking
PG-TO263-3
107N20N
PG-TO220-3
110N20N
PG-TO262-3
110N20N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
88
63
352
560
10
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=80 A,
R
GS
=25
W
mJ
kV/µs
V
W
°C
T
C
=25 °C
300
-55 ... 175
55/175/56
J-STD20 and JESD22
See figure 3
Rev. 2.3
page 1
2011-07-14

IPB107N20N3 G Related Products

IPB107N20N3 G IPB107N20N3GATMA1 IPI110N20N3GAKSA1 IPP110N20N3GXKSA1
Description MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 MOSFET MV POWER MOS MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maker Infineon - Infineon Infineon
Maximum operating temperature + 175 C - 175 °C 175 °C
Is it lead-free? - Lead free Contains lead Lead free
Is it Rohs certified? - conform to conform to conform to
Parts packaging code - D2PAK TO-262AA TO-220AB
package instruction - SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3
Contacts - 4 3 3
Reach Compliance Code - not_compliant not_compliant compliant
ECCN code - EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 560 mJ 560 mJ 560 mJ
Minimum drain-source breakdown voltage - 200 V 200 V 200 V
Maximum drain current (ID) - 88 A 88 A 88 A
Maximum drain-source on-resistance - 0.0107 Ω 0.011 Ω 0.011 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-263AB TO-262AA TO-220AB
JESD-30 code - R-PSSO-G2 R-PSIP-T3 R-PSFM-T3
JESD-609 code - e3 e3 e3
Number of components - 1 1 1
Number of terminals - 2 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 352 A 352 A 352 A
surface mount - YES NO NO
Terminal surface - Tin (Sn) Tin (Sn) Matte Tin (Sn)
Terminal form - GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
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