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SBL1060CT

Description
10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size51KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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SBL1060CT Overview

10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB

SBL1060CT Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage60 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current125 A
DISCONTINUED
SBL1030CT - SBL1060CT
10A SCHOTTKY BARRIER RECTIFIER
L
B
C
D
K
A
M
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
TO-220AB
Dim
Min
Max
A
14.48 15.75
B
10.00 10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70 14.27
H
2.40
2.70
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
All Dimensions in mm
1
2
3
E
G
J
N
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
Terminals: Finish – Bright Tin. Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Weight: 2.24 grams (approximate)
H H
Pin 1 +
Pin 2 -
Pin 3 +
+
Case
P
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 95°C
(Note 1)
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
θ
JC
T
j
,
T
STG
@T
A
= 25°C unless otherwise specified
SBL
SBL
SBL
SBL
SBL
SBL
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
30
21
35
24.5
40
28
10
175
0.55
0.5
50
450
5.5
-65 to +150
0.70
45
31.5
50
35
60
42
Unit
V
V
A
A
V
mA
pF
°C/W
°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
Forward Voltage Drop
@ I
F
= 5.0A, T
C
= 25°C
Peak Reverse Current
@ T
C
= 25°C
at Rated DC Blocking Voltage
@ T
C
= 125°C
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance Junction to Case
(Note 1)
Operating and Storage Temperature Range
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
DS23048 Rev. 5 - 4
1 of 3
www.diodes.com
SBL1030CT - SBL1060CT
© Diodes Incorporated

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