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SBG1030L-T-F

Description
10 A, 25 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size94KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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SBG1030L-T-F Overview

10 A, 25 V, SILICON, RECTIFIER DIODE

NOT RECOMMENDED
FOR NEW DESIGN
SBG1025L - SBG1030L
10A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 2)
1
E
L1
D1
E1
D
H
Mechanical Data
Case: D2PAK
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Tin. Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Ordering Information: See Page 2
Weight: 1.7 grams (approximate)
K
2
L2
e
b
b1
c
A
a
L
c1
D PAK
Dim
Min
Max
A
4.07
4.82
b
0.51
0.99
b1
1.15
1.77
c
0.356
0.58
c1
1.143
1.65
D
8.39
9.65
D1
6.55
E
9.66
10.66
E1
6.23
e
2.54 Typ
H
14.61 15.87
L
1.78
2.79
L1
1.67
L2
1.77
a
All Dimensions in mm
2
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Typical Thermal Resistance Junction to Case (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
θ
JC
T
j
T
STG
SBG1025L
25
18
10
200
3.0
-65 to +125
-65 to +150
SBG1030L
30
21
Unit
V
V
A
A
°C/W
°C
°
C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 3)
@T
A
= 25°C unless otherwise specified
Symbol
SBG1025L
SBG1030L
V
(BR)R
Min
25
30
Typ
0.34
0.48
150
350
Max
0.45
0.36
0.55
0.50
1.0
260
Unit
V
V
V
Test Condition
I
R
= 1mA
@ I
F
= 10A, T
C
= 25°C
@ I
F
= 10A, T
C
= 125°C
@ I
F
= 20A, T
C
= 25°C
@ I
F
= 20A, T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
f = 1.0MHz, V
R
= 4.0V DC,
Per Element
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage (Note 3)
Typical Total Capacitance
Notes:
V
FM
I
RM
C
T
mA
pF
1. Thermal resistance: junction to case mounted on heat sink
2. RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Note 7.
3. Short duration pulse test used to minimize self-heating effect.
DS30127 Rev. 8 - 3
1 of 3
www.diodes.com
SBG1025L – SBG1030L
© Diodes Incorporated

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