IPS12CN10L G
IPP12CN10L G
OptiMOS
®
2 Power-Transistor
Features
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max
I
D
100
12
69
V
mW
A
• Ideal for high-frequency switching and synchronous rectification
Type
IPP12CN10L G
IPS12CN10L G
Package
Marking
PG-TO220-3
12CN10L
PG-TO251-3-11
12CN10L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
I
D,pulse
E
AS
T
C
=25 °C
I
D
=69 A,
R
GS
=25
W
I
D
=69 A,
V
DS
=80 V,
di /dt =100 A/µs,
T
j,max
=175 °C
Value
69
49
276
150
mJ
Unit
A
Reverse diode dv /dt
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
dv /dt
6
kV/µs
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
±20
125
-55 ... 175
55/175/56
V
W
°C
J-STD20 and JESD22
see figure 3
2)
3)
T
jmax
=150°C and duty cycle D=0.01 for V
gs
<-5V
Rev. 1.03
page 1
2011-09-05
IPS12CN10L G
IPP12CN10L G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R
thJC
R
thJA
minimal footprint
6 cm2 cooling area
4)
-
-
-
-
-
-
1.2
62
40
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=83 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=80 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=34.5 A,
(TO220)
V
GS
=10 V,
I
D
=69 A,
(TO220)
V
GS
=4.5 V,
I
D
=34.5 A,
(TO251)
V
GS
=10 V,
I
D
=69 A,
(TO251)
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=69 A
100
1.2
-
-
1.84
0.1
-
2.4
1
µA
V
-
-
-
10
1
11.7
100
100
15.8
nA
mW
-
9.9
12
-
11.7
15.8
-
-
57
9.9
1.3
113
11.8
-
-
W
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Rev. 1.03
page 2
2011-09-05
IPS12CN10L G
IPP12CN10L G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=10 V,
I
D
=34.5 A,
R
G
=1.6
W
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
-
-
-
-
-
-
-
4210
528
29
14
9
39
5
5600
702
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=50 V,
V
GS
=0 V
V
DD
=50 V,
I
D
=69 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
16
10
13
58
3.7
54
-
-
-
-
-
-
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=69 A,
T
j
=25 °C
V
R
=50 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
1
101
193
69
276
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 1.03
page 3
2011-09-05
IPS12CN10L G
IPP12CN10L G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
140
80
120
70
60
100
50
P
tot
[W]
80
I
D
[A]
60
40
20
0
0
50
100
150
200
40
30
20
10
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10 µs
10
2
100 µs
10
0
I
D
[A]
1 ms
10
1
10 ms
Z
thJC
[K/W]
0.5
0.2
0.1
10
-1
DC
0.05
0.02
0.01
single pulse
10
0
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.03
page 4
2011-09-05
IPS12CN10L G
IPP12CN10L G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
250
10 V
7.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
30
5V
25
200
3.2 V
4.5 V
20
3.5 V
150
R
DS(on)
[mW]
I
D
[A]
15
4V
4.5 V
100
4V
10
10 V
50
3.5 V
5
3.2 V
3V
0
0
1
2
3
4
5
0
0
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
150
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
160
140
120
100
100
g
fs
[S]
50
175 °C
25 °C
I
D
[A]
80
60
40
20
0
0
2
4
6
0
0
20
40
60
80
100
120
140
V
GS
[V]
I
D
[A]
Rev. 1.03
page 5
2011-09-05
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