PHOTODIODE
Si APD
S8890 series
Long wavelength type APD
Features
Applications
l
High sensitivity
l
High gain
l
Low terminal capacitance
l
YAG laser detection
l
Long wavelength light detection
I
General ratings / Absolute maximum ratings
Dimensional
outline/Window
material *
Effective active
area size *
(mm)
f0.2
f0.5
f1.0
f1.5
f3.0
Effective
active area
(mm )
0.03
0.19
0.78
1.77
7.0
Absolute maximum ratings
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Package
S8890-02
S8890-05
S8890-10
S8890-15
S8890-30
x/K
➁/K
TO-5
TO-8
-20 to +85
-55 to +125
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral Peak *
!
response sensitivity
range wavelength
l
lp
(nm)
(nm)
Breakdown
voltage
V
BR
I
D
=100 µA
Typ. Max.
(V)
(V)
Temp.
coefficient
of
V
BR
(V/°C)
Dark *
!
current
I
D
Typ.
(nA)
0.2
1.5
5.0
10.0
15.0
Max.
(nA)
2
15
50
100
150
Terminal *
!
capacitance
Ct
(pF)
0.2
0.5
1.5
2.5
8.0
Cut-off *
!
frequency
fc
R
L
=50W
(MHz)
280
240
230
220
220
Excess*
!
noise
figure
x
l=800
nm
Gain
M
l=800
nm
Type No.
S8890-02
S8890-05
400 to
940
500
800
2.5
S8890-10
1100
S8890-15
S8890-30
*1: K: borosilicate glass
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
0.3
100
1
Si APD
I
Dimensional outline (unit: mm)
➀
S8890-02/-05/-10/-15
9.1 ± 0.2
8.1 ± 0.1
5.9 ± 0.1
Y
S8890 series
X
ACTIVE AREA
a
PHOTOSENSITIVE
SURFACE
4.2 ± 0.2
0.4 MAX. (2.5)
0.45
LEAD
5.08 ± 0.2
1.5 MAX.
CASE
(20)
Chip position accuracy with
respect to the cap center
X, Y≤±0.3
The glass window may extend a
maximum of 0.2 mm beyond the
upper surface of the cap
TYPE No.
S8890-02
S8890-05
S8890-10
S8890-15
a
0.2
0.5
1.0
1.5
KAPDA0024EA
➁
S8890-30
13.9 ± 0.2
12.35 ± 0.1
10.5 ± 0.1
ACTIVE AREA
3.0
PHOTOSENSITIVE
SURFACE
0.5 MAX.
7.5 ± 0.2
CASE
0.45
LEAD
INDEX MARK
1.4
1.0 MAX.
Chip position accuracy with
respect to the cap center
X, Y≤±0.4
The glass window may extend a
maximum of 0.2 mm beyond the
upper surface of the cap
(15)
4.9 ± 0.2
(2.5)
KAPDA0025EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.:
19,
Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KAPD1010E01
Jan. 2004
DN
3
Microcontroller MCU
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