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GS81302QT10E-300I

Description
Static random access memory 1.8 or 1.5V 16M x 9 144M
Categorystorage    storage   
File Size2MB,29 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
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GS81302QT10E-300I Overview

Static random access memory 1.8 or 1.5V 16M x 9 144M

GS81302QT10E-300I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time12 weeks
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
length17 mm
memory density150994944 bit
Memory IC TypeQDR SRAM
memory width9
Number of functions1
Number of terminals165
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX9
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
GS81302QT07/10/19/37E-318/300/250/200
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.0 clock Latency
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaQuad-II+
TM
Burst of 2 SRAM
318 MHz–200 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS81302QT07/10/19/37E SigmaQuad-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaQuad-II+ B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed. Therefore the address field of a
SigmaQuad-II+ B2 RAM is always one address pin less than
the advertised index depth (e.g., the 16M x 8 has an 8M
addressable index).
SigmaQuad™ Family Overview
The GS81302QT07/10/19/37E are built in compliance with
the SigmaQuad-II+ SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302QT07/10/19/37E SigmaQuad SRAMs
Parameter Synopsis
-318
tKHKH
tKHQV
3.145 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
Rev: 1.00e 8/2017
1/28
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS81302QT10E-300I Related Products

GS81302QT10E-300I GS81302QT37E-318 GS81302QT19E-318 GS81302QT19GE-250 GS81302QT19GE-318I GS81302QT37E-300I GS81302QT07GE-318I GS81302QT19E-318I GS81302QT37GE-300I GS81302QT37E-200
Description Static random access memory 1.8 or 1.5V 16M x 9 144M Static random access memory 1.8 or 1.5V 4M x 36 144M Static random access memory 1.8 or 1.5V 8M x 18 144M Static random access memory 1.8 or 1.5V 8M x 18 144M Static random access memory 1.8 or 1.5V 8M x 18 144M Static random access memory 1.8 or 1.5V 4M x 36 144M Static random access memory 1.8 or 1.5V 16M x 8 144M Static random access memory 1.8 or 1.5V 8M x 18 144M Static random access memory 1.8 or 1.5V 4M x 36 144M Static random access memory 1.8 or 1.5V 4M x 36 144M
Maximum operating temperature 85 °C + 70 C + 70 C 70 °C + 85 C 85 °C + 85 C + 85 C 85 °C 70 °C
Minimum operating temperature -40 °C 0 C 0 C - - 40 C -40 °C - 40 C - 40 C -40 °C -
organize 16MX9 4 M x 36 8 M x 18 8MX18 8 M x 18 4MX36 16 M x 8 8 M x 18 4MX36 4MX36
Maker GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology - GSI Technology
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