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AT25PE20-SSHN-T

Description
NOR Flash 2Mb 1.65V-3.6V SPI 85MHz IND TEMP
Categorystorage    storage   
File Size2MB,64 Pages
ManufacturerAdesto Technologies
Environmental Compliance
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AT25PE20-SSHN-T Overview

NOR Flash 2Mb 1.65V-3.6V SPI 85MHz IND TEMP

AT25PE20-SSHN-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAdesto Technologies
package instructionSOP,
Reach Compliance Codecompliant
Factory Lead Time13 weeks
Other featuresIT ALSO OPERATES AT 3V NOMINAL SUPPLY
Maximum clock frequency (fCLK)70 MHz
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.925 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width1
Number of functions1
Number of terminals8
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage1.8 V
Maximum seat height1.75 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3.9 mm
AT25PE20
2-Mbit DataFlash-L
Page Erase Serial Flash Memory
PRELIMINARY DATASHEET
Features
Single 1.65V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS
operation
Continuous read capability through entire array
Up to 85MHz
Low-power read option up to 15MHz
Clock-to-output time (t
V
) of 6ns maximum
User configurable page size
256 bytes per page (default)
264 bytes per page (customer selectable option)
One SRAM data buffer (256/264 bytes)
Flexible programming options
Byte/Page Program (1 to 256/264 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Single Command Page Read-Modify-Write Option
Flexible erase options
Page Erase (256/264 bytes)
Block Erase (2KB)
Sector Erase (32KB)
Chip Erase (2-Mbits)
128-byte Security Register
128 bytes factory programmed with a unique identifier
Hardware and software controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
300nA Ultra-Deep Power-Down current (typical)
5μA Deep Power-Down current (typical)
25μA Standby current (typical)
7mA Active Read current (typical)
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
8-lead SOIC (0.150ʺ wide and 0.208" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
DS-25PE20–139B–3/2018

AT25PE20-SSHN-T Related Products

AT25PE20-SSHN-T AT25PE20-SHN-T AT25PE20-MHN-T AT25PE20-MHN-Y
Description NOR Flash 2Mb 1.65V-3.6V SPI 85MHz IND TEMP NOR Flash 2Mb 1.65V-3.6V SPI 85MHz IND TEMP NOR Flash 2Mb 1.65V-3.6V SPI 85MHz IND TEMP NOR Flash 2Mb 1.65V-3.6V SPI 85MHz IND TEMP
Maker Adesto Technologies Adesto Technologies Adesto Technologies Adesto Technologies
Maximum operating temperature 85 °C + 85 C + 85 C + 85 C
Minimum operating temperature -40 °C - 40 C - 40 C - 40 C
organize 2MX1 256 k x 8 256 k x 8 256 k x 8
Product Category - NOR flash memory NOR flash memory NOR flash memory
Installation style - SMD/SMT SMD/SMT SMD/SMT
Package/box - SOIC-8 UDFN-8 UDFN-8
series - AT25PE20 AT25PE20 AT25PE20
storage - 2 Mbit 2 Mbit 2 Mbit
maximum clock frequency - 85 MHz 85 MHz 85 MHz
Interface Type - SPI SPI SPI
Data bus width - 8 bit 8 bit 8 bit
Supply voltage - min. - 1.65 V 1.65 V 1.65 V
Supply voltage - max. - 3.6 V 3.6 V 3.6 V
Supply current—max. - 15 mA 15 mA 15 mA
Encapsulation - Reel Reel Tray
storage type - Non-Volatile Non-Volatile Non-Volatile
speed - 85 MHz 85 MHz 85 MHz
Factory packaging quantity - 2000 6000 570
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