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GS8342DT19BGD-333I

Description
Static random access memory 1.8 or 1.5V 2M x 18 36M
Categorystorage    storage   
File Size319KB,29 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
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GS8342DT19BGD-333I Overview

Static random access memory 1.8 or 1.5V 2M x 18 36M

GS8342DT19BGD-333I Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time10 weeks
Maximum access time0.45 ns
Maximum clock frequency (fCLK)333 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density37748736 bit
Memory IC TypeQDR SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Minimum standby current1.7 V
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
GS8342DT07/10/19/37BD-450/400/350/333/300
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.0 Clock Latency
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
36Mb SigmaQuad-II+
TM
Burst of 4 SRAM
450 MHz–300 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8342DT07/10/19/37BD SigmaQuad-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaQuad-II+ B4
RAM is four times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore the address
field of a SigmaQuad-II+ B4 RAM is always two address pins
less than the advertised index depth (e.g., the 4M x 8 has a 1M
addressable index).
SigmaQuad™ Family Overview
The GS8342DT07/10/19/37BD are built in compliance with
the SigmaQuad-II+ SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 37,748,736-bit (36Mb)
SRAMs. The GS8342DT07/10/19/37BD SigmaQuad SRAMs
Parameter Synopsis
-450
tKHKH
tKHQV
2.22 ns
0.45 ns
-400
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
Rev: 1.01a 8/2017
1/29
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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