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GS8321Z36AD-400I

Description
Static random access memory 2.5 or 3.3V 1M x 36 32M
Categorystorage    storage   
File Size307KB,35 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
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GS8321Z36AD-400I Overview

Static random access memory 2.5 or 3.3V 1M x 36 32M

GS8321Z36AD-400I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time8 weeks
Other featuresIT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density37748736 bit
Memory IC TypeZBT SRAM
memory width36
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
organize1MX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
GS8321Z18/32/36AD-400/375/333/250/200/150
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V, or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 18Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 165-bump BGA package
• RoHS-compliant 165-bump BGA package available
36Mb Pipelined and Flow Through
Synchronous NBT SRAM
400 MHz–150 MHz
2.5 V, or 3.3 V V
DD
2.5 V, or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8321Z18/32/36AD may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8321Z18/32/36AD is implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 165-bump BGA package.
Functional Description
The GS8321Z18/32/36AD is a 36Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-400
2.5
2.5
395
475
4.0
4.0
290
335
-375
2.5
2.66
390
455
4.2
4.2
275
320
-333
2.5
3.3
355
415
4.5
4.5
260
305
-250
2.5
4.0
280
335
5.5
5.5
235
270
-200
3.0
5.0
240
280
6.5
6.5
200
240
-150
3.8
6.7
205
230
7.5
7.5
190
220
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03 8/2013
1/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8321Z36AD-400I Related Products

GS8321Z36AD-400I GS8321Z18AGD-333I GS8321Z18AGD-150I GS8321Z18AD-375 GS8321Z18AGD-250I GS8321Z36AGD-150 GS8321Z18AGD-375I GS8321Z36AGD-333I GS8321Z32AD-333 GS8321Z18AGD-400
Description Static random access memory 2.5 or 3.3V 1M x 36 32M Static random access memory 2.5 or 3.3V 2M x 18 36M Static random access memory 2.5 or 3.3V 2M x 18 36M Static random access memory 2.5 or 3.3V 2M x 18 36M Static random access memory 2.5 or 3.3V 2M x 18 36M Static random access memory 2.5 or 3.3V 1M x 36 36M Static random access memory 2.5 or 3.3V 2M x 18 36M Static random access memory 2.5 or 3.3V 1M x 36 36M Static random access memory 2.5 or 3.3V 1M x 32 32M Static random access memory 2.5 or 3.3V 2M x 18 36M
Is it lead-free? Contains lead Lead free Lead free Contains lead Lead free Lead free Lead free Lead free Contains lead Lead free
Is it Rohs certified? incompatible conform to conform to incompatible conform to conform to conform to conform to incompatible conform to
Maker GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology
Parts packaging code BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
package instruction LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA,
Contacts 165 165 165 165 165 165 165 165 165 165
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
Factory Lead Time 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks
Other features IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE
JESD-30 code R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165
JESD-609 code e0 e1 e1 e0 e1 e1 e1 e1 e0 e1
length 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm
memory density 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 33554432 bit 37748736 bit
Memory IC Type ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
memory width 36 18 18 18 18 36 18 36 32 18
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of terminals 165 165 165 165 165 165 165 165 165 165
word count 1048576 words 2097152 words 2097152 words 2097152 words 2097152 words 1048576 words 2097152 words 1048576 words 1048576 words 2097152 words
character code 1000000 2000000 2000000 2000000 2000000 1000000 2000000 1000000 1000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 1MX36 2MX18 2MX18 2MX18 2MX18 1MX36 2MX18 1MX36 1MX32 2MX18
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 260 NOT SPECIFIED 260 260 260 260 NOT SPECIFIED 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm
Maximum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount YES YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Terminal surface Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm
Humidity sensitivity level - 3 3 - 3 3 3 3 - 3
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