GS82564Z18/36(GB/GD)
119- & 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 4Mb, 9Mb, 18Mb, 36Mb, and 72Mb
devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• RoHS-compliant 119- and 165-bump BGA packages
288Mb Pipelined and Flow Through
Synchronous NBT SRAM
400 MHz–200 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS82564Z18/36 may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, in addition to the rising-edge-triggered
registers that capture input signals, the device incorporates a
rising edge triggered output register. For read cycles, pipelined
SRAM output data is temporarily stored by the edge-triggered
output register during the access cycle and then released to the
output drivers at the next rising edge of clock.
The GS82564Z18/362 is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 119-bump or 165-bump BGA package.
Functional Description
The GS82564Z18/36 is a 288Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
-400
2.5
2.5
730
820
4.0
4.0
520
540
-333
2.5
3.0
650
720
4.5
4.5
500
550
-250
2.5
4.0
540
590
5.5
5.5
440
500
-200
3.0
5.0
520
470
6.5
6.5
410
470
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow Through
2-1-1-1
Rev: 1.02a 8/2017
1/34
© 2015, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS82564Z18/36(GB/GD)
GS82564Z18/36 119-Bump BGA Pin Description
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
NC
CK
CKE
W
E
1
E
3
E
2
G
ADV
ZZ
FT
LBO
ZQ
TMS
TDI
TDO
TCK
V
DD
V
SS
V
DDQ
Type
I
I
I/O
I
—
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
No Connect
Clock Input Signal; active high
Clock Enable; active low
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable
Sleep mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
FLXDrive Output Impedance Control
Low = Low Impedance [High Drive], High = High Impedance [Low Drive])
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Core power supply
I/O and Core Ground
Output driver power supply
Rev: 1.02a 8/2017
4/34
© 2015, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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