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24C01C-E/P

Description
Electrically erasable programmable read-only memory 128x8
Categorystorage    storage   
File Size959KB,37 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

24C01C-E/P Overview

Electrically erasable programmable read-only memory 128x8

24C01C-E/P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDIP
package instructionDIP, DIP8,.3
Contacts8
Reach Compliance Codecompliant
Factory Lead Time6 weeks
Other featuresDATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED
Maximum clock frequency (fCLK)0.4 MHz
Data retention time - minimum200
Durability1000000 Write/Erase Cycles
I2C control byte1010DDDR
JESD-30 codeR-PDIP-T8
JESD-609 codee3
length9.27 mm
memory density1024 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count128 words
character code128
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize128X8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height5.334 mm
Serial bus typeI2C
Maximum standby current0.00005 A
Maximum slew rate0.003 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
Maximum write cycle time (tWC)1.5 ms
Base Number Matches1
24C01C
1K 5.0V I
2
C™ Serial EEPROM
Features:
• Single Supply with Operation from 4.5V to 5.5V
• Low-Power CMOS Technology:
- Read current 1 mA, max.
- Standby current 5
A,
max.
• 2-Wire Serial Interface, I
2
C™ Compatible
• Cascadable up to Eight Devices
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kHz and 400 kHz Clock Compatibility
• Page Write Time 1 ms max.
• Self-Timed Erase/Write Cycle
• 16-Byte Page Write Buffer
• ESD Protection >4000V
• More than 1 Million Erase/Write Cycles
• Data Retention >200 Years
• Factory Programming Available
• Packages include 8-lead PDIP, SOIC, TSSOP,
DFN, TDFN, MSOP and 6-lead SOT-23
• Pb-Free and RoHS Compliant
• Temperature Ranges:
- Industrial (I):
-40C to +85C
- Automotive (E):
-40C to +125C
Description:
The Microchip Technology Inc. 24C01C is a 1K bit
Serial Electrically Erasable PROM with a voltage range
of 4.5V to 5.5V. The device is organized as a single
block of 128 x 8-bit memory with a 2-wire serial
interface. Low-current design permits operation with
max. standby and active currents of only 5
A
and 1
mA, respectively. The device has a page write capabil-
ity for up to 16 bytes of data and has fast write cycle
times of only 1 ms for both byte and page writes. Func-
tional address lines allow the connection of up to eight
24C01C devices on the same bus for up to 8K bits of
contiguous EEPROM memory. The device is available
in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm),
8-pin 2x3 DFN and TDFN, 8-pin MSOP and TSSOP
packages. The 24C01C is also available in the 6-lead
SOT-23 package.
Block Diagram
A0 A1 A2
HV Generator
Memory
Control
Logic
I/O
Control
Logic
XDEC
EEPROM
Array
SDA SCL
V
CC
V
SS
Sense Amp.
R/W Control
YDEC
Package Types
PDIP, MSOP
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
Test
SCL
SDA
A0
A1
A2
V
SS
SOIC, TSSOP
1
2
3
4
8
7
6
5
V
CC
Test
SCL
SDA
DFN/TDFN
A0 1
A1 2
A2 3
V
SS
4
8 V
CC
7 Test
6 SCL
5 SDA
SCL
V
SS
SDA
SOT-23
1
2
3
6
5
4
V
CC
A0
A1
1997-2012 Microchip Technology Inc.
DS21201K-page 1

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