R1LV0108E Series
1Mb Advanced LPSRAM (128k word x 8bit)
R10DS0152EJ0100
Rev.1.00
2013.6.21
Description
The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher
density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications
where a simple interfacing, battery operating and battery backup are the important design objectives. It has been
packaged in 32-pin SOP,32-pin TSOP and 32-pin sTSOP.
Features
Single 2.7~3.6V power supply
Small stand-by current: 0.6µA (3.0V, typical)
No clocks, No refresh
All inputs and outputs are TTL compatible.
Easy memory expansion by CS1# and CS2
Common Data I/O
Three-state outputs: OR-tie Capability
OE# prevents data contention on the I/O bus
R10DS0152EJ0100 Rev.1.00
2013.6.21
Page 1 of
12
R1LV0108E Series
Operation Table
CS1#
X
H
L
L
L
Note 1.
CS2
L
X
H
H
H
H: V
IH
L:V
IL
WE#
X
X
L
H
H
OE#
X
X
X
L
H
DQ0~7
High-Z
High-Z
Din
Dout
High-Z
Operation
Stand-by
Stand-by
Write
Read
Output disable
X: V
IH
or V
IL
Absolute Maximum
Parameter
Power supply voltage relative to Vss
Terminal voltage on any pin relative to Vss
Power dissipation
Operation temperature
Storage temperature range
Storage temperature range under bias
Note
Symbol
Vcc
V
T
P
T
Topr
*3
Tstg
Tbias
*3
R Ver.
I Ver.
Value
-0.3 to +4.6
-0.3
*1
to Vcc+0.3
*2
0.7
R Ver.
I Ver.
-65 to 150
0 to +70
-40 to +85
0 to +70
-40 to +85
unit
V
V
W
°C
°C
°C
1. –3.0V for pulse
≤
30ns (full width at half maximum)
2. Maximum voltage is +4.6V.
3. Ambient temperature range depends on R/I-version. Please see table on page 1.
R10DS0152EJ0100 Rev.1.00
2013.6.21
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