IPD800N06N G
OptiMOS
®
Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
60
80
16
V
mΩ
A
Type
IPD800N06N G
Package
Marking
PG-TO252-3
800N06N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
16
11
64
43
6
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
1)
I
D
=16 A,
R
GS
=25
Ω
I
D
=16 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
W
°C
T
C
=25 °C
47
-55 ... 175
55/175/56
See figure 3
Rev.1.3
page 1
2008-09-01
IPD800N06N G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=16 µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=16 A
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=16 A
60
2.1
-
-
3
0.01
-
4
1
µA
V
-
-
-
-
-
-
3.2
75
50
K/W
Values
typ.
max.
Unit
-
-
-
-
7
1
10
54
1
14
100
100
80
-
-
nA
mΩ
Ω
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
2)
Rev.1.3
page 2
2008-09-01
IPD800N06N G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
3)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=16 A,
R
G
=39
Ω
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
-
-
-
-
-
-
280
75
22
7
38
22
27
370
100
33
11
57
33
40
pF
ns
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=30 V,
V
GS
=10 V
V
DD
=30 V,
I
D
=16 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
1.7
0.8
3.3
4.1
7
6.0
4
2.2
1.1
4.9
6.0
10
-
5
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=16 A,
T
j
=25 °C
V
R
=30 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.97
25
35
16
64
1.3
31
44
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev.1.3
page 3
2008-09-01
IPD800N06N G
1 Power dissipation
P
tot
=f(T
C
);
V
GS
≥6
V
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
50
20
40
16
30
12
P
tot
[W]
20
I
D
[A]
8
10
4
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
2
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
limited by on-state
resistance
10 µs
100 µs
10
1
DC
Z
thJC
[K/W]
1 ms
0.5
I
D
[A]
10 ms
10
0
0.2
10
0
0.1
0.05
0.02
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-1
V
DS
[V]
t
p
[s]
Rev.1.3
page 4
2008-09-01
IPD800N06N G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
30
20 V
10 V
7V
5V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
250
200
20
6.5 V
5.5 V
R
DS(on)
[m
Ω
]
150
6V
I
D
[A]
6V
100
6.5 V
7V
10
5.5 V
10 V
50
20 V
5V
4.5 V
0
0
1
2
0
4
5
0
10
20
30
3
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
20
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
20
16
15
12
10
g
fs
[S]
8
175 °C
I
D
[A]
5
4
25 °C
0
0
2
4
6
0
0
10
20
30
V
GS
[V]
I
D
[A]
Rev.1.3
page 5
2008-09-01
Real-time operating system RTOS
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