IDTF1192NLGI
Datasheet
RF Dual Wideband Gain-Settable Downconverting Mixer
G
ENERAL
D
ESCRIPTION
This document describes the specifications for the
IDTF1192 Dual Wideband, Gain-Settable, Zero-
Distortion
TM
Flat-Noise
TM
, RF to IF Downconverting Mixer.
The F1192 offers very low power consumption with
excellent linearity. In addition to this and the four
dynamically adjustable gain settings, the F1192
performance is exceptional across an extremely broad
range of RF and IF frequencies. All of this makes it
ideal for myriad applications including:
•
•
•
•
•
•
2G/3G/4G/5G/Multimode Remote Radio Units
High order MIMO systems, µcells, picocells, DAS
Point to Point µWave Backhaul systems
Broadband Repeaters
Public Safety Infrastructure
Any radio system operating between 400 MHz and
4000 MHz
400MHz to 3800MHz
RF range: 400MHz to 3800MHz
LO range: 400MHz to 3600MHz
IF Range: 50MHz to 600MHz
Dual Path for MIMO
4 Gain Settings; 11dB, 8dB, 5dB, 2dB
2 bit gain step control
Ideal for Multi-Carrier Systems
+35dBm OIP3
Low Noise Figure at any gain setting via IDT’s
FlatNoise
TM
technology
Z = 200 Ω IF balanced, 50 Ω RF, 50 Ω LO
single ended
All internally matched. Single BOM for all RF,
LO and IF frequencies
4 mm x 4 mm, 24-pin TQFN package
Independent Path Standby mode
75 nsec settling for gain adjustment
VCC = 3.3V, 835 mW, 620 mW (low power
mode)
F
EATURES
C
OMPETITIVE
A
DVANTAGE
F1192 offers maximum performance and flexibility at
minimum power consumption. The unique and patented
settable-gain feature allows it to be used in a very wide
variety of radiocard applications, even allowing for
dynamic adjustment of gain to maximize performance on
the fly. The extremely wide RF and IF bandwidths are
achieved with a fixed BOM with all internal matching.
The device can function with as little as -6 dBm LO
power and with independent channel shutdown modes
for ease of integration into high order TDD MIMO
systems.
F
UNCTIONAL
B
LOCK
D
IAGRAM
TM
Zero-Distortion
TM
TM
FlatNoise
TM
B
AND
P
ERFORMANCE
S
UMMARY
RF Frequency (MHz)
Gain (max G
11
setting)
Gain (min G
2
setting)
NF @ max gain (dB)
IIP3 @ min gain (dBm)
OIP3 @ G
8
(dBm)
IP1dB @ min gain (dBm)
2x2 @ min gain (dBc)
Channel Isolation (dB)
Pdiss (mW)
900
11.0
2.5
8.9
28
37
13.6
-75
48
792
1900
10.8
2.3
8.7
27
34
14.7
-82
47
835
2600
10.3
1.8
10.0
29
35
14.6
-73
48
875
3500
9.0
0.5
10.9
30
35
15.8
-68
45
935
O
RDERING
I
NFORMATION
Omit IDT
prefix
0.9 mm height
package
Tape &
Reel
IDTF1192NLGI8
RF product Line
Green
Industrial
Temp range
IDTF1192, Rev O 02/22/2016
1
© 2016 Integrated Device Technology, Inc.
F1192
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
VCC to GND
STBY_A, STBY_B, Gain_Select1,
Gain_Select2, RF_A, RF_B, LO1_ADJ,
LO2_ADJ
IF_A+, IF_A-, IF_B+, IF_B-
LO_IN
IF_BiasA, IF_BiasB
IF_Ref_Bias
RF Input Power (RF_A, RF_B) continuous
LO Input Power (LO_IN) continuous
Continuous Power Dissipation
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
ElectroStatic Discharge – CDM
(JEDEC 22-C101F)
Symbol
V
CC
V
CTRL
IF
OUT
LO
IN
IF
BIAS
IF
REF
RF
MAX
LO
MAX
P
DISS
T
j
T
ST
T
LEAD
-65
Min
-0.5
-0.5
2.4
-0.5
Max
+3.6
Vcc + 0.5
Vcc + 0.5
+0.5
50
500
+20
+20
1.5
150
150
260
Class 2
(2500 V)
Class C3
(1000 V)
Units
V
V
V
V
ohms
ohms
dBm
dBm
W
°
C
°
C
°
C
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
P
ACKAGE
T
HERMAL AND
M
OISTURE
C
HARACTERISTICS
θ
JA
(Junction – Ambient)
θ
JC
(Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per J-STD-020)
45 °C/W
2.1 °C/W
MSL1
RF Dual Wideband Gain-Settable Downconverting Mixer
2
IDTF1192, Rev O 02/22/2016
F1192
F1192 R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Supply Voltage(s)
Operating Temperature
Range
RF Freq Range
LO Freq Range
IF Range
LO Power
Symbol Comment
V
CC
T
CASE
F
RF
F
LO
F
IF
P
LO
Operating Range
All V
CC
pins
Case Temperature
min
3.15
-40
400
400
50
-6
typ
max
3.45
+105
3800
3600
600
+6
Units
V
deg C
MHz
dBm
IDTF1192, Rev O 02/22/2016
3
RF Dual Wideband Gain-Settable Downconverting Mixer
F1192
IDTF1192 S
PECIFICATION
(G
ENERAL
)
Typical Application Circuit, V
CC
= +3.3V, T
C
= +25°C, F
RF
= 900MHz, F
IF
= 199MHz, F
LO
= 1100MHz, P
LO
= 0 dBm, P
IN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted.
Parameter
Logic Input High
Logic Input Low
3
Logic Current
3
Symbol
V
IH
V
IL
I
IH,
I
IL
I
1CHA_LB
I
1CHA_MB
I
1CHA_HB
I
2CHA_LB
I
2CHA_MB
I
2CHA_HB
Comment
For all control pins
For all control pins
For all control pins
Single channel - low band LO
Single channel - mid band LO
Single channel - high band LO
Dual channel - low band LO
Dual channel - mid band LO
Dual channel - high band LO
Dual channel
F
RF
= 2.2GHz, F
LO
= 2GHz
OIP3 = +20dBm max gain
IFRef_Bias resistor = 3.9Kohm
min
1.1
-5
1
typ
max
0.65
+100
154
160
166
275
287
299
220
6
units
V
V
μA
Supply Current
134
140
147
240
253
265
194
3
340
mA
Supply Current –
reduced linearity
Shutdown current
I
SD_2CHA
Both Channels
Pin = -13 dBm
Gate STBY pins per Independent
Channel Standby table
Time for IF Signal to settle from
50% CTRL to within 90% of final
value
Pin = -13 dBm
Gate STBY pins per Independent
Channel Standby table
Time for IF Signal to settle from
50% CTRL to within 0.1 dB of final
value
Pin = -13 dBm
Gate Gain Select pins per Gain
Control table
Time for IF Signal to settle from
50% Gain Select to within 90% of
final value
Settling Time
T
SETT
920
nsec
75
RFIN Impedance
LO Port Impedance
IF Output Impedance
IF Return Loss
LO Return Loss
Z
RFIN
Z
LO
Z
IF
RL
IF
RL
LO
Single Ended
Single Ended
Differential
Differential 200 ohm
with 4:1 Balun
50
50
200
-15
-15
dB
dB
Ω
Single Ended 50 ohm
Note 1: Items in min/max columns in
bold italics
are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: JEDEC 3.3V and JEDEC 1.8V logic
RF Dual Wideband Gain-Settable Downconverting Mixer
4
IDTF1192, Rev O 02/22/2016
F1192
IDTF1192 S
PECIFICATION
(L
OW
B
AND
)
Typical Application Circuit, V
CC
= +3.3V, T
C
= +25°C, F
RF
= 900MHz, F
IF
= 199MHz, F
LO
= 1100MHz, P
LO
= 0 dBm, P
IN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted. Gain Setting = G
5
(~ 5 dB gain).
Parameter
Power Gain
Symbol Comment
G
11
G
8
G
5
G
2
G5
TempDrift
Gain
SLOPE
NF
G11
NF
G8
NF
G5 4, 5
NF
G2
IIP3
G11
Gain setting = G
11
Gain setting = G
8
Gain setting = G
5
Gain setting = G
2
Tcase -40C to +105C
referenced to +25C
IF center 200MHz
100MHz BW
Gain setting = G
11
Gain setting = G
8
Gain setting = G
5
Gain setting = G
2
Gain setting = G
11
800 kHz tone separation
Gain setting = G
8
800 kHz tone separation
Gain setting = G
5
800 kHz tone separation
Gain setting = G
2
800 kHz tone separation
Tcase -40C / +105C
referenced to +25C
Gain setting = G
11
800 kHz tone separation
Gain setting = G
8
800 kHz tone separation
Gain setting = G
5
800 kHz tone separation
Gain setting = G
5
Tc = +105°C
LO power = -3dBm
Vcc = 3.15V
Gain setting = G
2
800 kHz tone separation
min
4.05
typ
11.1
8.3
5.4
2.5
+0.7
-0.7
+ 0.006
8.9
9.4
10.1
10.7
24
29
max
6.75
units
dB
G5 Gain Change over temp
Gain Slope
dB
dB/MHz
Noise Figure
11.7
dB
Input IP3
IIP3
G8
IIP3
G5
4
dBm
26
28
28
-2.6/
+0.6
35
37
32
dBm
33
34
30
dB
IIP3
G2
G3 IIP3 change over temp
IIP3
G3TempDrift
OIP3
G11
OIP3
G8
Output IP3
OIP3
G5
OIP3
G2
IDTF1192, Rev O 02/22/2016
5
RF Dual Wideband Gain-Settable Downconverting Mixer
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