VFT1045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low V
F
= 0.41 V at I
F
= 5 A
TMBS
®
ITO-220AC
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
2
1
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
VFT1045BP
PIN 1
PIN 2
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
I
F(DC)
V
RRM
I
FSM
V
F
at I
F
= 10 A
T
OP
max. (AC mode)
T
J
max. (DC forward current)
Package
Circuit configuration
10 A
45 V
100 A
0.52 V
150 °C
200 °C
ITO-220AC
Single
MECHANICAL DATA
Case:
ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load
Operating junction temperature range (AC mode)
Isolation voltage from termal to heatsink t = 1 min
Junction temperature in DC forward current without reverse bias, t
1 h
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
SYMBOL
V
RRM
I
F(DC) (1)
I
FSM
T
OP
V
AC
T
J
(2)
VFT1045BP
45
10
100
-40 to +150
1500
200
UNIT
V
A
A
°C
V
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5 A
Instantaneous forward voltage
I
F
= 10 A
I
F
= 5 A
I
F
= 10 A
Reverse current
V
R
= 45 V
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
TYP.
0.50
0.57
0.41
0.52
-
5
MAX.
-
0.68
-
0.64
500
15
μA
mA
V
UNIT
Notes
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
(1)
Revision: 19-Mar-18
Document Number: 89453
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VFT1045BP
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
VFT1045BP
5.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
ITO-220AC
PREFERRED P/N
VFT1045BP-M3/4W
UNIT WEIGHT (g)
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
12
10
100
Instantaneous Reverse Current (mA)
DC Forward Current (A)
10
T
A
= 150 °C
T
A
= 125 °C
8
6
4
2
0
0
25
50
75
100
125
150
175
200
1
T
A
= 100 °C
0.1
DC Forward Current at
Thermal Equilibrium
0.01
T
A
= 25 °C
20
40
60
80
100
0.001
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
Fig. 1 - Maximum Forward Current Derating Curve
100
Instantaneous Forward Current (A)
10 000
10
T
A
= 125 °C
T
A
= 100 °C
Junction Capacitance (pF)
T
A
= 150 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
1
T
A
= 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
100
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 19-Mar-18
Document Number: 89453
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VFT1045BP
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
10
Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Revision: 19-Mar-18
Document Number: 89453
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000
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