BAS3020B...
Schottky Rectifier Diode
•
Reverse voltage: 30 V
•
Forward current: 2 A
•
Low forward voltage: 0.53 V typ. @ 2 A
•
Low leakage current 40 µA typ. @ 30 V
•
Low capacitance: 30 pF typ. @ 5 V
•
High ESD / transient robustness according to:
ESD (HBM): Class 3 B (> 8000 V)
ESD (MM): Class C ( > 400 V)
ISO7637-2: Pulse 1 ( -100 V, 2 ms)
Pulse 2 (-300 V, 50 µs)
Pulse 3 (-400 V, 100 ns)
•
For high efficiency DC/DC conversion,
fast switching, polarity protection, rectification
and clamping applications
•
Very small SMD package (2.0 x 1.25 x 0.9 mm³)
with improved operating temperature range
due to extra-low thermal resistance design
(see attached Forward current curves)
•
Ideal to replace SMA packages with significant
size advantage
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
BAS3020B
6
5
4
1
2
3
Type
BAS3020B
Package
SOT363
Configuration
single
Marking
E9s
1
2007-12-14
BAS3020B...
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Diode reverse voltage
1)
Peak reverse voltage
1)
RMS reverse voltage
1)
Forward current
1)2)
,
T
S
≤
96°C
Repetitive peak forward current
2)
(t
p
≤
1 ms,
D
≤
0.5)
Non-repetitive peak surge forward current
2)
(t
≤
10ms)
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
T
j
T
op
T
stg
Symbol
R
thJS
150
-55 ...125
-65 ...150
Value
≤
42
Unit
K/W
Unit
°C
I
FSM
10
Symbol
V
R
V
RM
V
R(RMS)
I
F
I
FRM
Value
30
30
21
2
3.5
A
Unit
V
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Reverse current
4)
I
R
V
R
= 5 V
V
R
= 10 V
V
R
= 30 V
Forward voltage
4)
I
F
= 500 mA
I
F
= 1 A
I
F
= 2 A
1
For
2
Only
µA
-
-
-
V
F
-
-
-
5
10
40
350
410
530
25
50
200
mV
410
470
600
T
A
> 25 °C the derating of VR and IF has to be considered. Please refer to the attached curves.
valid if pins 3 and 4 are connected in parallel.
3
For calculation of
R
thJA
please refer to Application Note Thermal Resistance.
4
Pulsed
test:
t
p
≤
300 µs;
D
= ≤
0.02
2
2007-12-14
BAS3020B...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
pF
Diode capacitance
C
T
V
R
= 1 V,
f
= 1 MHz
V
R
= 5 V,
f
= 1 MHz
V
R
= 10 V,
f
= 1 MHz
-
-
-
60
30
20
70
40
30
3
2007-12-14
BAS3020B...
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
10
0
A
Permissible Reverse voltage
V
R
=
ƒ
(T
A
)
t
p
= Parameter, Duty cycle < 0.01
Device mounted on PCB with
R
th = 160 k/W
35
V
tp=300µs
10
-1
V
Rmax
10
-2
25
I
F
125 °C
85 °C
25 °C
-40 °C
20
tp=100ms
15
DC
10
-3
10
5
10
-4
0
0.1
0.2
0.3
0.4
V
0.6
0
0
25
50
75
100
°C
150
V
F
T
A
Forward current
I
F
=
ƒ
(T
S
)
2250
mA
BAS3020B
1750
1500
I
F
1250
1000
750
500
250
0
0
SOD323 device
15
30
45
60
75
90 105 120
°C
150
T
S
5
2007-12-14
Mobile and portable
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