BGY66B
120 MHz, 25 dB gain reverse amplifier
Rev. 5 — 28 September 2010
Product data sheet
1. Product profile
1.1 General description
Hybrid high dynamic range amplifier module designed for applications in CATV systems
with a bandwidth of 5 MHz to 120 MHz operating with a voltage supply of 24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
1.3 Applications
Intended as a reverse amplifier for use in two-way systems
1.4 Quick reference data
Table 1.
Symbol
G
p
I
tot
[1]
Quick reference data
Parameter
power gain
total current consumption (DC)
Conditions
f = 10 MHz
V
B
= 24 V
[1]
Min
24.5
115
Typ
-
-
Max
25.5
135
Unit
dB
mA
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
NXP Semiconductors
BGY66B
120 MHz, 25 dB gain reverse amplifier
2. Pinning information
Table 2.
Pin
1
2
3
5
7
8
9
Pinning
Description
input
common
common
+V
B
common
common
output
1 3 5 7 9
1
5
9
Simplified outline
Graphic symbol
2 3 7 8
sym095
3. Ordering information
Table 3.
Ordering information
Package
Name
BGY66B
-
Description
Rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
×
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Version
SOT115J
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
i
T
stg
T
mb
Parameter
RF input voltage
storage temperature
mounting base temperature
Conditions
Min
-
−40
−20
Max
65
+100
+100
Unit
dBmV
°C
°C
BGY66B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
2 of 8
NXP Semiconductors
BGY66B
120 MHz, 25 dB gain reverse amplifier
5. Characteristics
Table 5.
Characteristics
Bandwidth 5 MHz to 120 MHz; V
B
= 24 V; T
mb
= 30
°
C; Z
S
= Z
L
= 75
Ω
; unless otherwise specified.
Symbol Parameter
G
p
SL
FL
s
11
s
22
CTB
X
mod
d
2
V
o
F
I
tot
[1]
[2]
[3]
Conditions
f = 10 MHz
Min
24.5
−0.2
-
20
20
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
25.5
+0.5
±0.2
-
-
−66
−54
−70
-
5
135
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dB
mA
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
composite triple beat
cross modulation
second order distortion
output voltage
noise figure
total current consumption (DC)
14 channels flat; V
o
= 48 dBmV;
measured at 67.25 MHz
14 channels flat; V
o
= 48 dBmV;
measured at 67.25 MHz
[1]
-
-
-
60
-
[3]
d
im
=
−60
dB
f = 120 MHz
[2]
115
f
p
= 55.25 MHz; V
p
= 48 dBmV; f
q
= 61.25 MHz; V
q
= 48 dBmV; measured at f
p
+ f
q
= 116.5 MHz.
Measured according to DIN45004B;
f
p
= 111.25 MHz; V
p
= V
o
; f
q
= 118.25 MHz; V
q
= V
o
−
6 dB; f
r
= 120.25 MHz; V
r
= V
o
−
6 dB; measured at f
p
+ f
q
−
f
r
= 109.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
BGY66B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
3 of 8
NXP Semiconductors
BGY66B
120 MHz, 25 dB gain reverse amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
D
E
Z
p
SOT115J
A2
1
A
L
F
S
W
d
U2
B
y
M
B
p
Q
e
e1
q2
q1
y
M
B
x
M
B
b
w
M
2
3
5
7
8
9
c
U1
q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.5
b
c
D
max.
d
E
max.
e
e1
F
L
min.
p
Q
max.
q
q1
q2
S
U1
U2
W
w
x
y
0.1
Z
max.
3.8
mm 20.8
4.15
2.04
0.51
0.25 27.2
13.75 2.54 5.08 12.7 8.8
3.85
2.54
0.38
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
OUTLINE
VERSION
SOT115J
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-02-04
10-06-18
Fig 1.
BGY66B
Package outline SOT115J
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
4 of 8
NXP Semiconductors
BGY66B
120 MHz, 25 dB gain reverse amplifier
7. Revision history
Table 6.
Revision history
Release date
20100928
Data sheet status
Product data sheet
Change notice
-
Supersedes
BGY66B v.4
Document ID
BGY66B v.5
Modifications:
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines of
NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
Product data sheet
Product specification
Product specification
Product specification
Preliminary specification
-
-
-
-
-
BGY66B v.3
BGY66B v.2
BGY66B v.1
BGY66B04 v.1
-
BGY66B v.4
(9397 750 14739)
BGY66B v.3
(9397 750 08798)
BGY66B v.2
(9397 750 02145)
BGY66B v.1
BGY66B04 v.1
(9397 738 70011)
20050329
20011018
19970414
19950922
19940915
BGY66B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
5 of 8
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