MCP1406/07
6A High-Speed Power MOSFET Drivers
Features
• High Peak Output Current: 6.0A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2500 pF in 20 ns
- 6800 pF in 40 ns
• Short Delay Times: 40 ns (typ.)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typ.)
- With Logic ‘0’ Input – 35 µA (typ.)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• Pin compatible with the TC4420/TC4429 devices
• Space-saving 8-Pin SOIC, PDIP and 8-Pin 6x5
DFN Packages
General Description
The MCP1406/07 devices are a family of
buffers/MOSFET drivers that feature a single-output
with 6A peak drive current capability, low shoot-through
current, matched rise/fall times and propagation delay
times. These devices are pin-compatible and are
improved versions of the TC4420/TC4429 MOSFET
drivers.
The MCP1406/07 MOSFET drivers can easily charge
and discharge 2500 pF gate capacitance in under
20 ns, provide low enough impedances in both the on
and off states to ensure the MOSFETs intended state
will not be affected, even by large transients. The input
to the MCP1406/07 may be driven directly from either
TTL or CMOS (3V to 18V).
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin. All
terminals are fully protect against Electrostatic
Discharge (ESD) up to 4 kV.
The MCP1406/07 single-output 6A MOSFET driver
family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
temperature rating, making it useful in any wide
temperature range application.
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
Package Types
MCP1407
MCP1406
MCP1406
MCP1407
5-Pin TO-220
Tab is
Common
to V
DD
8-Pin PDIP/SOIC
V
DD
1
INPUT 2
NC 3
GND 4
8-Pin 6x5 DFN
V
DD
INPUT
NC
GND
8
1
8 V
DD
V
DD
7 OUT OUT
6 OUT OUT
5 GND GND
V
DD
V
DD
1 2 3 4 5
OUT OUT
OUT OUT
GND GND
INPUT
GND
V
DD
GND
OUT
Note 1:
Duplicate pins must both be connected for proper operation.
2:
Exposed pad of the DFN package is electrically isolated.
2
3
4
7
6
5
©
2006 Microchip Technology Inc.
DS22019A-page 1
MCP1406/07
Functional Block Diagram
(1)
Inverting
130 µA
300 mV
Output
Output
Non-inverting
4.7V
MCP1406 Inverting
MCP1407 Non-inverting
V
DD
Input
Effective
Input C = 25 pF
GND
Note 1:
Unused inputs should be grounded.
DS22019A-page 2
©
2006 Microchip Technology Inc.
MCP1406/07
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (V
DD
+ 0.3V) to (GND – 5V)
Input Current (V
IN
>V
DD
)................................................50 mA
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
3:
V
DD
I
S
I
S
4.5
—
—
—
130
35
18.0
250
100
V
µA
µA
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
20
20
40
40
30
30
55
55
ns
ns
ns
ns
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
OH
V
OL
R
OH
R
OL
I
PK
I
DC
I
REV
V
DD
– 0.025
—
—
—
—
1.3
—
1.5
—
—
—
2.1
1.5
6
—
0.025
2.8
2.5
—
V
V
Ω
Ω
A
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
=
18V
(Note 2)
Note 2, Note 3
Duty cycle
≤
2%, t
≤
300 µsec.
V
IH
V
IL
I
IN
V
IN
2.4
—
–10
-5
1.8
1.3
—
—
—
0.8
10
V
DD
+0.3
V
V
µA
V
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Tested during characterization, not production tested.
Valid for AT and MF packages only. T
A
= +25°C
©
2006 Microchip Technology Inc.
DS22019A-page 3
MCP1406/07
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, operating temperature range with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
V
DD
I
S
4.5
—
—
Switching times ensured by design.
—
200
50
18.0
500
150
V
µA
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
25
25
50
50
40
40
65
65
ns
ns
ns
ns
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
C
L
= 2500 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
3.0
2.3
—
0.025
5.0
5.0
V
V
Ω
Ω
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
V
IN
2.4
—
–10
-5
—
—
—
—
—
0.8
+10
V
DD
+0.3
V
V
µA
V
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
18V.
Parameters
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 5L-TO-220
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
33.2
125
155
71
—
—
—
—
°C/W
°C/W
°C/W
°C/W
Typical four-layer board with
vias to ground plane
T
A
T
J
T
A
–40
—
–65
—
—
—
+125
+150
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
DS22019A-page 4
©
2006 Microchip Technology Inc.
MCP1406/07
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V <= V
DD
<= 18V.
120
100
Rise Time (ns)
80
60
40
20
0
4
100 pF
80
10,000 pF
8,200 pF
4,700 pF
2,500 pF
1,000 pF
6,800 pF
70
Fall Time (ns)
60
50
40
30
20
10
0
100 pF
10,000 pF
8,200 pF
1,000 pF
4,700 pF
2,500 pF
6,800 pF
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-1:
Voltage.
80
70
Rise Time (ns)
50
40
30
20
10
0
100
5V
Rise Time vs. Supply
FIGURE 2-4:
Voltage.
70
60
Fall Time vs. Supply
5V
10V
10V
Fall Time (ns)
60
50
40
30
20
10
15V
15V
1000
Capacitive Load (pF)
10000
0
100
1000
Capacitive Load (pF)
10000
FIGURE 2-2:
Load.
30
Rise and Fall Time (ns)
25
20
15
10
5
0
-40 -25 -10
5
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
85
Propagation Delay (ns)
Fall Time vs. Capacitive
V
DD
= 18V
t
RISE
V
IN
= 5V
t
D1
75
65
55
45
35
t
FALL
t
D2
20 35 50 65 80 95 110 125
Temperature ( C)
o
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
FIGURE 2-6:
Supply Voltage.
Propagation Delay vs.
©
2006 Microchip Technology Inc.
DS22019A-page 5
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