Product brief
Intel® Optane™ SSD DC P4800X Series
Data Center (DC), PCI Express* (P)
World’s Most Responsive
Data Center SSD
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Solve the most demanding storage and memory challenges with the
Intel® Optane™ SSD DC P4800X Series.
Every day, the amount of data created across the world is exploding to new
levels. Enterprises and cloud service providers thrive on this data to make critical
decisions, gain new insights from the data, and differentiate services. But, today’s
current storage technologies leave a technology gap in data storage tiers. DRAM is
far too expensive to scale and while NAND has the capacity and cost structure to
scale, it lacks sufficient performance to function in the memory space. To address
the gap, a storage solution that behaves like system memory is needed.
Combines Attributes of Memory and Storage
The Intel® Optane™ SSD DC P4800X is the first product to combine the attributes of
memory and storage. With an industry-leading combination of high throughput, low
latency, high QoS and ultra-high endurance, this innovative solution is optimized to break
through data access bottlenecks by providing a new data storage tier. The DC P4800X
accelerates applications for fast caching and fast storage to increase scale per server
and reduce transaction costs for latency sensitive workloads. In addition, the DC P4800X
enables data centers to deploy bigger and more affordable datasets to gain new insights
from large memory pools.
High Throughput for Breakthrough Performance
Realize breakthrough application performance with the DC P4800X. It is designed to
deliver 5-8x faster performance at low queue depth workloads,
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exhibiting extremely high
throughput for single accesses and super low latency. Where NAND-based SSDs are often
measured at a queue depth of 32 (SATA) or 128 (NVMe*) in order to showcase maximum
throughput, the DC P4800X can reach as much as 500,000 IOPS, or ~2GB/s, at a queue
depth of 11.1 This new technology is perfectly suited to accelerate enterprise applications to
new, breakthrough levels of performance.
Low Latency: Responsive Under Load
With a new data storage tier created by Intel® Optane™ technology, data centers can
consistently realize amazing response times under any workload. With NAND-based SSDs,
random write operations require an immense amount of background media management.
These tasks can add significant delay to the read operations. The Intel® Optane™ SSD DC
P4800X maintains consistent read response times regardless of the write throughput
applied to the drive. Read response times remain below <30
µ
s while withstanding up to
2GB/s of random write pressure.
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Predictably Fast Service: QoS
In an environment of fast growing data and ever demanding needs, data centers must
deploy solutions that enable predictably fast service. The DC P4800X is ideal for critical
applications with demanding latency requirements. Its 99% read response time is 60x that
of a high-endurance NAND SSD under random write workload.4 Optimized to minimize
delays in data access times, the DC P4800X results in faster time to insight for decision
making.
Product Brief | Intel® Optane™ SSD DC P4800X Series
Ultra-High Endurance
Endurance affects the life expectancy and costs of enterprise
SSDs. The DC P4800X is designed for high write environments,
and can withstand intense write traffic that is typically demanded
of memory. With its extremely high endurance, the life of the
DC P4800X is extended, making it suitable for write-intensive
applications such as online transaction processing, high
performance computing, write caching and logging.
The extended memory use case allows an Intel® Optane™ SSD
to participate in a shared memory pool with DRAM at either
the OS or application level enabling bigger memory or more
affordable memory. Bigger memory dramatically increases
the size of ‘working sets’ to enable new insights from data in
growing segments such as scientific computing, healthcare
and autonomous driving. More affordable memory means data
centers can use Intel® Optane™ SSDs to displace some DRAM.
Use Cases for Today’s Data Center
Data centers can explore two key use cases for the DC P4800X: fast
storage or cache, or extended memory.
Fast storage or cache refers to the tiering and layering which enable
a better memory-to-storage hierarchy. The DC P4800X provides a
new storage tier that breaks through the bottlenecks of traditional
NAND storage to accelerate applications, and enable more work to
get done per server.
About Intel® Optane™ Technology
Intel® Optane™ technology is a unique combination of 3D XPoint™
memory media with Intel’s advanced system memory controller,
interface hardware and software IP. This revolutionary technology
is offered in several form factors to unleash vast system
performance in a range of products.
In the Intel® Optane™ SSD DC P4800X, the revolutionary Intel®
Optane™ technology delivers the unparalleled combination of
high throughput, low latency, high QoS and ultra-high endurance.
FEATURE
SPECIFICATION
Capacity
Form Factor
Interface
Latency (typical) R/W
Quality of Service (QoS): 99.999%
Throughput
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Endurance
375GB, 750GB
Add-in-Card (AIC), Half-height, Half-length, Low-profile; U.2 2.5in
PCIe* 3.0 x4, NVMe*
<10µs
4KB5 Random, Queue Depth 1, Read/Write: <60/100 µs
4KB Random, Queue Depth 16, R/W: <150/200 µs
4KB Random, Queue Depth 16, Read/Write: up to 550/500k IOPS
4KB Random, Queue Depth 16, Mixed 70/30 Read/Write: up to 500k IOPS
30 Drive Writes per day (JESD219 workload)
375GB - 20.5 Petabytes Written (PBW)
750GB - 41 PBW
For more information, visit intel.com/ssd
Responsiveness defined as average read latency measured at queue depth 1 during 4k random write workload. Measured using FIO 2.15. Common configuration - Intel® 2U Server System, OS
CentOS 7.2, kernel 3.10.0-327.el7.x86_64, CPU 2 x Intel® Xeon® E5-2699 v4 @ 2.20GHz (22 cores), RAM 396 GB DDR @ 2133MHz. Intel drives evaluated - Intel® Optane™ SSD DC P4800X 375GB and
Intel® SSD DC P3700 1600 GB. Samsung drives evaluated – Samsung® SSD PM1725a, Samsung® SSD PM1725, Samsung® PM963, Samsung® PM953. Micron drive evaluated – Micron® 9100 PCIe®
NVMe™ SSD. Toshiba drives evaluated – Toshiba® ZD6300. Test – QD1 Random Read 4K latency, QD1 Random RW 4K 70% Read latency, QD1 Random Write 4K latency using FIO 2.15.
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Common Configuration - Intel 2U Server System, OS CentOS 7.2, kernel 3.10.0-327.el7.x86_64, CPU 2 x Intel® Xeon® E5-2699 v4 @ 2.20GHz (22 cores), RAM 396GB DDR @ 2133MHz. Configuration
– Intel® Optane™ SSD DC P4800X 375GB and Intel® SSD DC P3700 1600 GB. Performance – measured under 4K 70-30 workload at QD1-16 using FIO 2.15.
3. Common Configuration - Intel 2U Server System, OS CentOS 7.2, kernel 3.10.0-327.el7.x86_64, CPU 2 x Intel® Xeon® E5-2699 v4 @ 2.20GHz (22 cores), RAM 396GB DDR @ 2133MHz. Configuration
– Intel® Optane™ SSD DC P4800X 375GB and Intel® SSD DC P3700 1600 GB. Latency – Average read latency measured at QD1 during 4K Random Write operations using FIO 2.15.
4. Common Configuration - Intel 2U Server System, OS CentOS 7.2, kernel 3.10.0-327.el7.x86_64, CPU 2 x Intel® Xeon® E5-2699 v4 @ 2.20GHz (22 cores), RAM 396GB DDR @ 2133MHz. Configuration
– Intel® Optane™ SSD DC P4800X 375GB and Intel® SSD DC P3700 1600 GB. QoS – measures 99% QoS under 4K 70-30 workload at QD1 using FIO 2.15.
5.
4 KB = 4,096 bytes
6. Performance measured using FIO* rev 2.13, with 4 workers with total Queue Depth of 16.
Intel technologies’ features and benefits depend on system configuration and may require enabled hardware, software or service activation. Performance varies depending on system configuration. No
computer system can be absolutely secure. Check with your system manufacturer or retailer or learn more at intel.com.
Benchmark results were obtained prior to implementation of recent software patches and firmware updates intended to address exploits referred to as “Spectre” and “Meltdown”. Implementation of
these updates may make these results inapplicable to your device or system.
Tests document performance of components on a particular test, in specific systems. Differences in hardware, software, or configuration will affect actual performance. Consult other sources of infor-
mation to evaluate performance as you consider your purchase. For more complete information about performance and benchmark results, visit www.intel.com/benchmarks.
No license (express or implied, by estoppel or otherwise) to any intellectual property rights is granted by this document.
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arising from course of performance, course of dealing, or usage in trade.
All information provided here is subject to change without notice. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
The products described in this document may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are
available on request.
Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked
“reserved” or “undefined.” Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. The information
here is subject to change without notice. Do not finalize a design with this information. Tests document performance of components on a particular test, in specific systems. Differences in hardware,
software, or configuration will affect actual performance. Consult other sources of information to evaluate performance as you consider your purchase.
Results have been estimated or simulated using internal Intel analysis or architecture simulation or modeling, and provided to you for informational purposes. Any differences in your system hardware,
software or configuration may affect your actual performance.
Cost reduction scenarios described are intended as examples of how a given Intel-based product, in the specified circumstances and configurations, may affect future costs and provide cost savings.
Circumstances will vary. Intel does not guarantee any costs or cost reduction.
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Copyright © 2018 Intel Corporation. Printed in the USA.
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