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NXH5104UK/A1Z

Description
Electrically erasable programmable read-only memory 4 Mbit Serial Electrically erasable programmable read-only memory
Categorysemiconductor    Memory IC    Electrically erasable programmable read-only memory   
File Size1MB,39 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance
Download Datasheet Parametric View All

NXH5104UK/A1Z Overview

Electrically erasable programmable read-only memory 4 Mbit Serial Electrically erasable programmable read-only memory

NXH5104UK/A1Z Parametric

Parameter NameAttribute value
MakerFREESCALE (NXP)
Product Categoryelectrically erasable programmable read-only memory
Installation styleSMD/SMT
Package/boxWLCSP-13
storage4 Mbit
organize512 k x 8
Interface TypeSerial
Data retention10 Year
maximum clock frequency10 MHz
Supply current—max.0.7 mA
Supply voltage - min.1 V
Supply voltage - max.2 V
Minimum operating temperature- 20 C
Maximum operating temperature+ 85 C
Working power current700 uA
Working power voltage1 V to 2 V
Factory packaging quantity2000
unit weight5.140 mg
NXH5104
4 Mbit Serial SPI EEPROM
Rev. 6.2 — 16 May 2017
Product data sheet
COMPANY PUBLIC
1
General description
The NXP NXH5104 is a 4 Mbit serial electrically erasable and programmable read-only
memory (EEPROM). It provides byte level and page level serial EEPROM functions,
sector level protection and power-down functions. The device has been developed for
low-power low-voltage applications and is provided with a Serial Peripheral Interface
(SPI) compatible interface.
2
Features and benefits
Compact Wafer Level Chip Scale Package (WLCSP) package
2
• –
7.8 mm , 380 μm thick
13 bumps with 400 μm pitch
Integrated Power Management Unit (PMU)
• –
V
DD
supply range 1.0 V to 2.0 V
V
DD(IO)
supply range: V
DD
to 2.6 V
Direct operation from ZnAir, NiMH, Silver-Zinc batteries
Active peak current limiting
Low current consumption
• –
Average power down current < 5 μA
Average read current 0.6 mA (V
DD
= V
DD(IO)
= 1.8 V, F
SPI
=5 MHz)
Average write current 0.7 mA (V
DD
= V
DD(IO)
= 1.8 V, F
SPI
= 5 MHz)
Low-power CMOS technology
Auxiliary supply voltage enabling direct LED drive
Self-timed program cycle
• –
256 byte page write buffer
Partial page write allowed
Write Protect
• –
Quarter, half or entire memory array
Serial Peripheral Interface (SPI)
• –
Speed up to 5 MHz for 1.2 V signaling level
Speed up to 10 MHz for 1.8 V signaling level
SPI Mode 0 (0,0) and 3 (1,1) support
SPI 3-wire support for SPI mode 0
Fixed High Supply mode for faster start-up
Space-saving 2.80 mm × 2.74 mm Wafer Level Chip Scale Package (WLCSP)
Highly integrated: 1 external cap
High Reliability
• –
10-year data retention
500 000 program cycles
Wear-out management

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