A Global Leader in
Flash Memory Storage Solutions
Embedded & Integrated Solutions (EIS)
Industrial
iNAND
®
Industrial 7250-I Embedded Flash Drives
Specification
Capacity
Interface
NAND Flash Technology
Operating Voltage
Operating Temp
Sequential R/W (MB/s)
Random R/W (IOPS)
Enhanced Features
8GB – 16GB
32GB
64GB
64GB
SDINBDG4-##G-XI
Industrial Extended Temp
8GB – 64GB*
e.MMC 5.1 HS400
X2 MLC
-40°C to 85°C
Performance
Up to 300/170
Up to 25K/15K
Package (mm)
11.5x13x 0.8mm
11.5x13x 1.0mm
11.5 x 13x 1.2 mm
Ordering Information
SDINBDG4-##G-I
Up to 300/170
Up to 25K/15K
Industrial Wide Temp
8GB – 64GB*
e.MMC 5.1 HS400
X2 MLC
-25°C to 85°C
Core voltage (VCC) 2.7-3.6 V I/O (VCCQ) voltage: either: 1.7-1.95V or 2.7-3.6V
Advanced Health Report, Manual Refresh, Smart Partitioning
Industrial Cards
*** New Industrial Grade AF3 cards arriving Sept. 2017***
Specification
Capacity
Interface
NAND Flash Technology
Operating Temp
Performance**
Enhanced Features
Ordering Information
1
SD™ Industrial XT
8GB to 64GB*
SD 3.0 High-Speed
1Ynm X2
-40°C to 85°C
SD™ Industrial
8GB to 64GB*
SD 3.0 High-Speed
1Ynm X2
-25°C to 85°C
Sequential Read: Up to 20MB/s
Sequential Write: Up to 20MB/s
microSD™ Industrial
8GB to 64GB*
1
SD 3.0 High-Speed
1Ynm X2
Health Status Meter, Enhanced Power Immunity, Read Refresh, Host Lock, Programmable ID, Secure FFU
SDSDAF2-###G-XI
SDSDAF2-###G-I
SDSDQAF2-###G-I
Please order SDSDQAF-008G for 8GB and SDSDQAF-016G for 16GB
Commercial
Commercial iNAND
®
Embedded Flash Drives
Specification
Capacity
Interface
NAND Flash Technology
Operating Voltage
Operating Temp
Performance
Sequential R/W (MB/s)
Random R/W (IOPS)
8GB – 16GB
32GB
64GB
8GB –64GB
Up to 300/170
Up to 25K/15K
Package (mm)
11.5x13x0.8mm
11.5x13x1.0mm
11.5x13x1.2mm
Ordering Information
SDINBDG4-##G
SDINADF4-##G
11.5x13x0.9mm
11.5x13x1.0mm
11.5x13x1.2mm
Up to 280/150
Up to 3.3K/2.8K
iNAND® 7250
8GB to 64GB
eMMC 5.1 HS400
X2 MLC
Core Voltage (VCC): 3.3V,
I/O (VCCQ): 1.8V, 3.3V
-25°C to 85°C
iNAND® 7232
16GB to 128GB
eMMC 5.1 HS400
X3 TLC
Core Voltage (VCC): 3.3V,
I/O (VCCQ): 1.8V
Commercial
Commercial microSD™ Cards
Specification
Capacity
Interface
NAND Flash Technology
Operating Voltage
Operating Temperatures
Performance**
Ordering Information
Speed Class 10/U3
Sequential RW: Up to 80/50 MB/s
SDSDQAE-###G
Speed Class V30
Speed Class 10
Speed Class 4
32GB to 256GB
SD 3.0 UHS-I 104
1Znm
16GB to 256GB
SD 3.0 UHS-I 104
1Znm
2.7V to 3.6V
-25°C to 85°C
Speed Class 10/U1
Sequential RW: Up to 40/10 MB/s
SDSDQAD-###G
8GB to 64GB
SD 3.0 UHS-I 50
1Znm
Speed Class 4
Sequential R/W: Up to 20/5 MB/s
SDSDQAB-###G
Commercial Full-size SD™ Cards
Specification
Capacity
Interface
NAND Flash Technology
Operating Voltage
Operating Temperatures
Performance**
Ordering Information
Speed Class U3
Sequential RW: Up to 80/50 MB/s
SDSDAE-###G
Speed Class U3
Speed Class 10
Speed Class 4
32GB to 128GB*
SD 3.0 UHS-I 104
1Znm
16GB to 256GB
SD 3.0 UHS-I 104
1Znm, 1Z/3D
2.7V to 3.6V
-25°C to 85°C
Speed Class U1
Sequential RW: Up to 40/10 MB/s
SDSDAD-###G
8GB to 64GB
SD 3.0 UHS-I 50
1Znm, 1Z/3D
Speed Class 4
Sequential R/W: Up to 20/5 MB/s
SDSDAA-###G
Write-Intensive
Write-Intensive Flash Devices
Specification
Application
Capacity
Interface
NAND Flash Technology
Performance
Sequential Write/Read (Mbps)
Operating Voltage
Operating Temperatures
Endurance
Ordering Information
0°C up to 85°C
Up to 400TBW
SDSDQEC-###G
4GB to 64GB
SD 5.0 UHS-I 104
1Znm
Up to 400/400
microSD™ Cards
Full-size SD™ Cards
USB Drive
SD™ Cards
Constant Video Buffering
4GB, 32GB
SD 5.0 UHS-104
1Znm
Up to 400/400
16G
USB 2.0
1Znm
Up to 40/56
Datalogging/Repository
32GB, 64GB, 128GB
SD 4.0 UHS-I 104
1Znm
Up to 240/400
Core: 3.3V, IO: 3/3V, 1.8V
0°C up to 85°C
Up to 450TBW
SDSDEC-###G
0°C up to 55°C
Up to 160TBW
SDUFDEC-016G
0°C up to 85°C
Up to 896TBW
SDSDEB-###G
Contact Information
For all inquiries, please email:
oemproducts@sandisk.com
For more information, please visit:
www.sandisk.com
* 1 gigabyte (GB) = 1 billion bytes.
** Based on SanDisk internal testing. Performance based
on e.MMC high speed interface, using an 8-bit bus.
Read and write speed may vary depending on read/write
conditions. 1 megabyte (MB) = 1 million bytes.
*** Device operation at 3.3V I/O limited to max 1 hour usage
(ex: for use during content/image preloading)
Western Digital Technologies, Inc.
951 SanDisk Drive
|
Milpitas
|
CA 95035
|
USA
© 2017 Western Digital Corporation or its affiliates. All rights reserved. SanDisk and iNAND are trademarks of Western Digital Corporation or its
affiliates, registered in the United States and other countries. Android is a trademark of Google Inc. The microSD, microSDHC and microSDXC
marks and logos are trademarks of SD-3C, LLC. Other brand names mentioned herein are for identification purposes only and may be the
trademark(s) of their respective holder(s).
Western Digital Technologies, Inc. is the seller of record and licensee in the Americas of SanDisk® products.
EIS_ProdBrochure_042717
京公网安备 11010802033920号
EEWORLD
