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GSWP100W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
User’s Guide
GSWP100W-EVBPA
100W GaN E-HEMT Wireless Power Transfer
Evaluation Board, Optimized for Class EF2
Amplifiers
User’s Guide
Visit
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for the latest version of this user’s guide.
GSWP100W-EVBPA Rev 180529
© 2018 GaN Systems Inc.
www.gansystems.com
1
Please refer to the Evaluation Board/Kit Important Notice on page 26
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GSWP100W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
User’s Guide
DANGER!
Electrical Shock Hazard - Hazardous high voltage may be present on the
board during the test and even brief contact during operation may result in
severe injury or death. Follow all locally approved safety procedures when
working around high voltage.
Never leave the board operating unattended. After it is de-energized,
always wait until all capacitors are discharged before touching the board.
This board should be handled by qualified personnel ONLY.
PCB surface and devices can become hot. Contact may cause burns. Do not
touch!
CAUTION
This product contains parts that are susceptible to damage by electrostatic
discharge (ESD) or exposure to voltages in excess of the specified voltage.
Always follow ESD prevention procedures when handling the product.
Avoid applying excessive voltages to the power supply terminals or signal
inputs or outputs, always connected to the load during the test on-going.
GSWP100W-EVBPA Rev 180529
© 2018 GaN Systems Inc.
www.gansystems.com
2
Please refer to the Evaluation Board/Kit Important Notice on page 26
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GSWP100W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
User’s Guide
Introduction to Magnetic Resonant Wireless Power Transfer
Recent technological advances in power semiconductors are enabling Wireless Power Transfer
(WPT) as a technically and commercially viable option for charging and powering equipment
across a wide range of markets, applications, and power levels.
Inductive charging has been in use for a number of years, however, it’s burdened with limitations
that restrict it to low power applications with tightly controlled alignment between the transmitter
and receiver.
A more advantageous approach, magnetic resonant charging, addresses these shortcomings by
using a high frequency oscillating magnetic field to transfer energy. The benefits that magnetic
resonant charging offers include variable spacing between the transmitter and receiver, the ability
to charge through materials such as a desk or an enclosure, one-to-many charging, ease of
installation, suitability for high power levels, and fast charging. Table 1 provides a comparison
between inductive charging and magnetic resonant charging.
GaN E-HEMTS are a key enabler of magnetic resonant charging because their extremely fast
switching speeds, on the order of a few nanoseconds, result in very low switching losses. This
allows them to operate efficiently at very high frequencies, such as the 6.78MHz that is commonly
used for magnetic resonant charging.
Table 1
A comparison of Inductive charging and Magnetic Resonant charging
Charging technology
Frequency range
Max transfer range
Multi-device
Spatial Freedom
Power Range
Efficiency
Inductive
80-300kHz
5mm
No
Low
Low & limited
30W max
Limited to 80%
Magnetic Resonant
6.78MHz
50mm
Yes, at different power levels
High
Broad & versatile
50W to 20kW+
High: up to 95%
A high-level block diagram of a resonant wireless power transfer system is shown in Figure 1. The
transmit section is composed of a power amplifier, an impedance matching circuit and a transmit
coil. High frequency energy is transferred wirelessly at 6.78MHz to the receive circuit which is
comprised of a receive coil, an impedance matching circuit and a rectifier.
The GSWP100W-EVBPA evaluation board is designed to support and expedite the innovation of
WPT systems by providing the Power Amplifier, the most challenging aspect of the system design.
GSWP100W-EVBPA Rev 180529
© 2018 GaN Systems Inc.
www.gansystems.com
3
Please refer to the Evaluation Board/Kit Important Notice on page 26
_____________________________________________________________________________________________________________________
GSWP100W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
User’s Guide
Figure 1 -
A magnetic resonant wireless power transfer design.
Evaluation board overview
The GSWP100W-EVBPA uses GaN Systems’ GS61008P E-HEMTs in a 6.78MHz class EF2 power
amplifier. The GS61008Ps are used with the integrated high-speed pSemi PE29102 gate driver in a
push-pull configuration. The outputs of the PE29102 are capable of providing switching transition
speeds in the nano-seconds range for hard switching applications.
This User’s Guide includes a circuit description, a quick-start guide and measurement results.
Evaluation Kit Contents and Requirements
Kit Contents
The GSWP100W-EVBPA includes the following hardware for evaluating the GaN E-HEMT 100W
power amplifier.
Table 2
GSWP100W-EVBPA Evaluation Kit Contents
Quantity
1
1
1
2
Description
GaN E-HEMT GS61008P WPT PA evaluation board assembly
WPT PA heatplate
WPT PA EMC shield
2 pins DC cord
GSWP100W-EVBPA Rev 180529
© 2018 GaN Systems Inc.
www.gansystems.com
4
Please refer to the Evaluation Board/Kit Important Notice on page 26
_____________________________________________________________________________________________________________________
GSWP100W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
User’s Guide
Hardware Requirements
In order to evaluate the performance of the evaluation board, the following equipment is required:
•
DC power supply 100V/15A
•
TEK scope with current probe TCM0030A
•
Fluke 87 multimeter for input current
•
50dB 500W attenuator as load
•
Spectrum analyzer
•
Power meter
•
Thermal meter
Evaluation Board Assembly Overview
The evaluation board (EVB) is assembled with two GS61008P E-HEMT transistors and two PE29102
GaN E-HEMT drivers. Headers are included for monitoring the signal input, signal output, power
connections and detection monitoring signals. Probe points are included for waveform
measurements. Provision has been made for a single, suitable heatsink to be fastened against the
two E-HEMTs, using the two holes in the center of the bottom heatplate.
Figure 2 •
Top side of GSWP100W-EVBPA Evaluation Board Assembly
GSWP100W-EVBPA Rev 180529
© 2018 GaN Systems Inc.
www.gansystems.com
5
Please refer to the Evaluation Board/Kit Important Notice on page 26
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