25LC080CT-I/SN datasheet, PDF - EEWORLD Datasheet

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25LC080CT-I/SN: DescriptionElectrically Erasable Programmable Read Only Memory 8K 1K X 8 16B PAGE 2.5V SER EE IND; Categorystorage storage; File Size231KB，25 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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25LC080CT-I/SN Overview

Electrically Erasable Programmable Read Only Memory 8K 1K X 8 16B PAGE 2.5V SER EE IND

25LC080CT-I/SN Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SOIC
package instruction	SOP, SOP8,.25
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Maximum clock frequency (fCLK)	5 MHz
Data retention time - minimum	200
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
length	4.9 mm
memory density	8192 bit
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	8
word count	1024 words
character code	1000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1KX8
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
power supply	3/5 V
Certification status	Not Qualified
Maximum seat height	1.75 mm
Serial bus type	SPI
Maximum standby current	0.000001 A
Maximum slew rate	0.005 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	3.9 mm
Maximum write cycle time (tWC)	5 ms
write protect	HARDWARE/SOFTWARE
Base Number Matches	1

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25LC080C 25LC320A

25LC080D 25LC640A

25LC160C 25LC128

25LC160D 25LC256

8K-256K SPI Serial EEPROM High Temp Family Data Sheet

Features:

• Max. Clock 5 MHz

• Low-power CMOS Technology:

- Max. Write Current: 5 mA at 5.5V, 5 MHz

- Read Current: 5 mA at 5.5V, 5 MHz

- Standby Current: 10

μA

at 5.5V

• 1024 x 8 through 32768 x 8-bit Organization

• Byte and Page-level Write Operations

• Self-timed Erase and Write Cycles (6 ms max.)

• Block Write Protection:

- Protect none, 1/4, 1/2 or all of array

• Built-in Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

• Sequential Read

• High Reliability:

- Endurance: >100K erase/write cycles

- Data retention: > 200 years

- ESD protection: > 4000V

• Temperature Range Supported:

- Extended (H):

-40°C to +150°C

• Package is Pb-free and Halogen free

Description:

Microchip Technology Inc. 25LCXXX* devices are Mid-

density 8 through 256 Kbit Serial Electrically Erasable

PROMs (EEPROM). The devices are organized in

blocks of x8-bit memory and support the Serial Periph-

eral Interface (SPI) compatible serial bus architecture.

Byte-level and page-level functions are supported.

The bus signals required are a clock input (SCK) plus

separate data in (SI) and data out (SO) lines. Access to

the device is controlled through a Chip Select (CS)

input.

Communication to the device can be paused via the

hold pin (HOLD). While the device is paused, transi-

tions on its inputs will be ignored, with the exception of

Chip Select, allowing the host to service higher priority

interrupts.

The 25LCXXX is available in a standard 8-lead SOIC

package. The package is Pb-free.

Package Types (not to scale)

SOIC

(SN)

HOLD

SCK

Pin Function Table

Name

SCK

HOLD

Function

Chip Select Input

Serial Data Output

Write-Protect

Ground

Serial Data Input

Serial Clock Input

Hold Input

Supply Voltage

*25LCXXX is used in this document as a generic part number for the 25 series devices.

2009 Microchip Technology Inc.

Preliminary

DS22131B-page 1

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