NXP Semiconductors
Product specification
MMIC wideband amplifier
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
S
I
S
P
tot
T
stg
T
j
P
D
PARAMETER
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
T
s
80
C
CONDITIONS
RF input AC coupled
65
MIN.
4
BGA2771
MAX.
50
200
+150
150
10
UNIT
V
mA
mW
C
C
dBm
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to
solder point
CONDITIONS
P
tot
= 200 mW; T
s
80
C
VALUE
300
UNIT
K/W
CHARACTERISTICS
V
S
= 3 V; I
S
= 33 mA; f = 1 GHz; T
j
= 25
C;
unless otherwise specified.
SYMBOL
I
S
s
21
2
R
L IN
R
L OUT
NF
BW
P
L(sat)
P
L 1 dB
IP3
(in)
IP3
(out)
PARAMETER
supply current
insertion power gain
return losses input
return losses output
noise figure
bandwidth
saturated load power
load power
input intercept point
output intercept point
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
CONDITIONS
MIN.
29
TYP.
33.3
21.4
20.8
17
13
9
9
4.5
4.7
2.4
13.2
10.5
12.1
8.4
0.5
4.3
21.9
16.5
MAX.
45
UNIT
mA
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
at
s
21
2
3
dB below flat gain at 1 GHz
2002 Aug 06
3
NXP Semiconductors
Product specification
MMIC wideband amplifier
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2771 MMIC. The device is internally matched to 50
,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should be not more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
handbook, halfpage
BGA2771
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
DC-block
handbook, halfpage
100 pF
input
DC-block
100 pF
DC-block
100 pF
output
MGU437
Fig.3 Simple cascade circuit.
mixer
to IF circuit
or demodulator
wideband
amplifier
oscillator
from RF
circuit
MGU438
Fig.4 IF amplifier application.
V
halfpage
handbook,
s
C1
Vs
RF input
C2
GND1
GND2
RF in
RF out
C3
MGU436
L1
RF output
handbook, halfpage
mixer
to IF circuit
or demodulator
LNA
wideband
amplifier
oscillator
MGU439
antenna
Fig.2 Typical application circuit.
Fig.5 RF amplifier application.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
2002 Aug 06
4
handbook, halfpage
mixer
to power
amplifier
wideband
amplifier
oscillator
from modulation
or IF circuit
MGU440
Fig.6 Power amplifier driver application.
MCU
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