BGU7044
1 GHz wideband low-noise amplifier
Rev. 1 — 2 January 2012
Product data sheet
1. Product profile
1.1 General description
The BGU7044 MMIC is a 3.3 V wideband amplifier with internal biasing. It is designed
specifically for high linearity, low-noise applications over a frequency range of 40 MHz to
1 GHz. It is especially suited for Set-Top Box applications.
The LNA is housed in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Voltage supply of 3.3 V
Internally biased
Gain of 14 dB
Flat gain between 40 MHz and 1 GHz
Noise figure of 2.8 dB
High linearity with an IP3
O
of 29 dBm
75
input and output impedance
ESD protection > 2 kV Human Body Model (HBM) and > 1.5 kV Charged Device
Model (CDM) on all pins
1.3 Applications
Terrestrial Silicon and cable Set-Top Boxes (STB)
Silicon and “Can” tuners
Personal Video Recorders (PVR) and Digital Video Recorders (DVR)
Home networking and in-house signal distribution
NXP Semiconductors
BGU7044
1 GHz wideband low-noise amplifier
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C; typical values at V
CC
= 3.3 V; Z
S
= Z
L
= 75
; R
bias
= 18
; 40 MHz
f
1
1000 MHz.
Symbol Parameter
V
CC
I
CC(tot)
T
amb
NF
P
L(1dB)
IP3
O
[1]
Conditions
RF input AC coupled
Min
3.1
30
40
-
Typ Max Unit
3.3
34
-
2.8
13
29
3.5
38
+85
-
-
-
V
mA
C
dB
dBm
dBm
supply voltage
total supply current
ambient temperature
noise figure
output power at 1 dB gain
compression
output third-order intercept point
1 GHz
[1]
-
-
The fundamental frequency (f
1
) is 1000 MHz. The intermodulation product (IM3) is 2
f
2
f
1
, where
f
2
= f
1
1 MHz. Input power P
i
=
10
dBm.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
RF_OUT
V
CC
n.c.
n.c.
GND
RF_IN
1
2
3
5
4
sym141
Simplified outline
6
5
4
Graphic symbol
3
2
6
1
3. Ordering information
Table 3.
Ordering information
Package
Name
BGU7044
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BGU7044
Marking
Marking code
LJ*
Description
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Type number
BGU7044
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 2 January 2012
2 of 10
NXP Semiconductors
BGU7044
1 GHz wideband low-noise amplifier
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
I
CC(tot)
P
tot
P
i
T
stg
T
j
T
amb
V
ESD
Parameter
supply voltage
total supply current
total power dissipation
input power
storage temperature
junction temperature
ambient temperature
electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E
Charged Device Model (CDM);
according to JEDEC standard
22-C101B
[1]
T
sp
is the temperature at the solder point of the ground lead.
Conditions
RF input AC coupled
configurable with external resistor
T
sp
100
C
single tone
[1]
Min Max
0.6
3.5
-
-
-
65
-
40
2
60
250
20
+150
150
+85
-
Unit
V
mA
mW
dBm
C
C
C
kV
1.5
-
kV
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
240
Unit
K/W
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C; typical values at V
CC
= 3.3 V; Z
S
= Z
L
= 75
; R
bias
= 18
; 40 MHz
f
1
1000 MHz.
Symbol Parameter
V
CC
I
CC(tot)
s
21
2
SL
sl
FL
NF
RL
in
RL
out
P
L(1dB)
IP3
O
[1]
Conditions
RF input AC coupled
Min
3.1
30
-
-
-
-
-
-
Typ
3.3
34
14
1
0.2
2.8
20
12
13
29
Max Unit
3.5
38
-
-
-
-
-
-
-
V
mA
dB
dB
dB
dB
dB
dB
dBm
dBm
supply voltage
total supply current
insertion power gain
slope straight line
flatness of frequency response
noise figure
input return loss
output return loss
output power at 1 dB gain
compression
output third-order intercept point
1 GHz
[1]
-
-
The fundamental frequency (f
1
) is 1000 MHz. The intermodulation product (IM3) is 2
f
2
f
1
, where
f
2
= f
1
1 MHz. Input power P
i
=
10
dBm.
BGU7044
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 2 January 2012
3 of 10
NXP Semiconductors
BGU7044
1 GHz wideband low-noise amplifier
8. Application information
Other applications are possible. Please contact your local sales representative for more
information. Application notes are available on the NXP website.
8.1 Application circuit
V
CC
C4
C3
n.c.
3
X1
C1
R1 = Rbias
2
6
4
5
n.c.
1
L1
C2
X2
RF_IN
RF_OUT
001aam382
Components are listed inTable
8.
Fig 1.
BGU7044 application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
8.2 Application circuit board layout
GND
GND
GND
VER.2
C4
BP CTRL
GAIN
CTRL
X1
VCC
VCC
X2
C3
RF_IN
C1
L1
R1
C2
RF_OUT
IN
75 OHM
OUT
001aao235
PCB material = FR4.
PCB thickness = 1.6 mm.
PCB size = 30 mm
30 mm.
r
= 4.5; thickness of copper layer = 35
m.
Components are listed in
Table 8
Fig 2.
BGU7044 application circuit board layout
BGU7044
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 2 January 2012
4 of 10
NXP Semiconductors
BGU7044
1 GHz wideband low-noise amplifier
Table 8.
List of components
See
Figure 1
and
Figure 2
Component
C1, C2
C3
C4
L1
R1
X1, X2
[1]
Description
capacitor
capacitor
capacitor
chip ferrite bead
resistor
connector
Value
10 nF
10 nF
10
F
1.5 k
18
75
[1]
[1]
Remarks
Function
DC blocking
decoupling
decoupling
Murata BLM18HE152SN1DF
R
bias
F-connector, edge mount PCB
reflow type, Bomar 861V509ERG
RF choke
bias setting
input/output
L1 and R1 must have a power rating of 0.1 W or higher.
BGU7044
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 2 January 2012
5 of 10
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