DMP2021UTSQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
-20V
R
DS(ON)
max
16mΩ @ V
GS
= -4.5V
22mΩ @ V
GS
= -2.5V
I
D
max
T
C
= +25°
C
-18A
-15A
Features and Benefits
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported up by
a PPAP and is ideal for use in:
Battery Management Application
Power Management Functions
DC-DC Converters
Mechanical Data
TSSOP-8
Case: TSSOP-8
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Lead
Frame. Solderable per MIL-STD-202, Method 208
Weight: 0.039 grams (Approximate)
D
S
S
ESD PROTECTED
S
G
Top View
Bottom View
D
D
D
D
G
Gate Protection
Diode
S
Pin1
Pin Out
Equivalent Circuit
Ordering Information
(Notes 4 & 5)
Part Number
DMP2021UTSQ-13
Notes:
Case
TSSOP-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
P2021U
YY WW
= Manufacturer’s Marking
P2021U = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 17 = 2017)
WW = Week (01 to 53)
1
4
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© Diodes Incorporated
DMP2021UTSQ
Document number: DS39576 Rev. 2 - 2
DMP2021UTSQ
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= -4.5V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 7)
Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
T
A
= +25°
C
Steady
State
Steady
State
T
A
= +25°
C
T
A
= +70°
C
T
C
= +25°
C
T
C
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
SM
I
AS
E
AS
Value
-20
±10
-7.4
-5.9
-18
-14
Unit
V
V
A
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
T
A
= +25°
C
Steady State
T
A
= +25°
C
Steady State
Steady State
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
0.9
146
1.3
95
16
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-20
—
—
-0.35
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
12
15
19
-0.8
2,760
262
220
16
34
59
3.5
8.3
7.5
25
125
96
48
33
Max
—
-1
±10
-1.0
16
22
40
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -4.5A
V
GS
= -2.5V, I
D
= -4.5A
V
GS
= -1.8V, I
D
= -2.5A
V
GS
= 0V, I
S
= -1.0A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -15V, I
D
= -4.0A
pF
Ω
nC
ns
V
DS
= -15V, V
GS
= -4.5V,
R
G
= 1Ω, I
D
= -4.0A
I
F
= -1.0A, di/dt = 100A/μs
I
F
= -1.0A, di/dt = 100A/μs
ns
nC
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMP2021UTSQ
Document number: DS39576 Rev. 2 - 2
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© Diodes Incorporated
DMP2021UTSQ
30.0
V
GS
= -1.8V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
= -2.0V
V
GS
= -3.0V
I
D
, DRAIN CURRENT (A)
V
GS
= -2.5V
20.0
V
GS
= -1.5V
25
30
V
DS
= -5V
20
15.0
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
V
GS
= -1.3V
V
GS
= -1.2V
15
10.0
10
T
J
= 150
o
C
T
J
= 125
o
C
0
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
5.0
V
GS
= -1.0V
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.03
0.028
0.026
V
GS
= -1.8V
0.024
0.022
0.02
V
GS
= -2.5V
0.018
0.016
0.014
0.012
0.01
0
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
5
V
GS
= -4.5V
3
5
0.4
0.6
0.8
1
1.2
1.4
1.6
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
1.8
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
2
4
6
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
10
I
D
= -2.5A
I
D
= -4.5A
R
DS(ON),
DRAIN-SOURCE ON-RESISTANCE ()
0.024
V
GS
= -4.5V
0.022
0.02
T
J
= 125
o
C
0.018
T
J
= 85
o
C
0.016
0.014
0.012
T
J
= -55
o
C
0.01
0.008
0
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
5
T
J
= 25
o
C
T
J
= 150
o
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.8
1.6
V
GS
= -2.5V, I
D
= -4.5A
V
GS
= -4.5V, I
D
= -4.5A
1.4
1.2
1
V
GS
= -1.8V, I
D
= -2.5A
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
DMP2021UTSQ
Document number: DS39576 Rev. 2 - 2
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July 2017
© Diodes Incorporated
DMP2021UTSQ
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.04
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1
0.03
V
GS
= -1.8V, I
D
= -2.5A
V
GS
= -2.5V, I
D
= -4.5A
0.8
0.6
I
D
= -1mA
0.02
0.4
I
D
= -250µA
0.01
V
GS
= -4.5V, I
D
= -4.5A
0.2
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
30
V
GS
= 0V
25
C
T
, JUNCTION CAPACITANCE (pF)
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
f = 1MHz
C
iss
I
S
, SOURCE CURRENT (A)
20
15
1000
10
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
C
oss
5
C
rss
100
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
8
7
I
D
, DRAIN CURRENT (A)
6
5
V
GS
(V)
4
3
2
1
0
0
10
30
40
Q
g
(nC)
Figure 11. Gate Charge
20
50
60
V
DS
= -15V, I
D
= -4A
0
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
R
DS(ON)
Limited
10
P
W
=
100µs
1
DC
P
W
= 10s
P
W
= 1s
T
J(Max)
= 150℃
T
C
= 25℃
P
W
= 100ms
Single Pulse
P
W
= 10ms
DUT on 1*MRP
Board
P
W
= 1ms
V
GS
= -4.5V
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
0.1
0.01
DMP2021UTSQ
Document number: DS39576 Rev. 2 - 2
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© Diodes Incorporated
DMP2021UTSQ
1
D=0.9
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.7
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 143℃/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMP2021UTSQ
Document number: DS39576 Rev. 2 - 2
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