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TSOD1F2HM R4G

Description
Rectifier 1A, 200V Surface Mount Rectifier
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    rectifier   
File Size338KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

TSOD1F2HM R4G Overview

Rectifier 1A, 200V Surface Mount Rectifier

TSOD1F2HM R4G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryRectifier
seriesTSOD1FxHM
productRectifiers
TSOD1F1HM - TSOD1F10HM
Taiwan Semiconductor
Small Signal Product
1A, 100V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated devices
- Ideal for surface mounted applications
- Low leakage current
- Metallurgical bonded construction
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-123FL
MECHANICAL DATA
- Case: JEDEC SOD-123FL, molded plastic over passivated chip
- Terminals: Solder Plated, solderable per MIL-STD-750, Method 2026
- Weight: 21 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Note 1)
mm
PARAMETER
SYMBOL
TSOD1F TSOD1F TSOD1F TSOD1F TSOD1F TSOD1F
1HM
FB
70
100
100
2HM
FD
200
200
4HM
FG
400
280
400
1
25
1.3
5
50
150
4
180
-55 to +150
250
500
6HM
FJ
600
420
600
8HM
FK
800
560
800
10HM
FM
1000
700
1000
en
d
140
ed
UNIT
V
V
V
A
A
V
μA
ns
pF
K/W
°C
Version: B1606
V
RRM
V
RMS
V
DC
I
(AV)
Maximum instantaneous forward voltage at 1A (Note 2)
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (Note 3)
Typical junction capacitance (Note 4)
Typical thermal resistance (Note 5)
No
Junction and Storage Temperature Range
Note 1: Averaged over any 20ms period.
Note 2: Pulse test: 300μs pulse width, 1% duty cycle.
Note 3: Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A
Note 4: Measured at 1.0MHz and applied average voltage of 4.0V DC.
Note 5: Thermal resistance junction to ambient, 6.0 mm
2
copper pads to each terminal.
tR
V
F
I
R
t
rr
C
J
R
θJA
T
J
, T
STG
T
A
=25°C
T
A
=125°C
Peak forward surge current 8.3ms single half sine wave
superimposed on rated load
eco
I
FSM

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