TSOD1F1HM - TSOD1F10HM
Taiwan Semiconductor
Small Signal Product
1A, 100V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated devices
- Ideal for surface mounted applications
- Low leakage current
- Metallurgical bonded construction
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-123FL
MECHANICAL DATA
- Case: JEDEC SOD-123FL, molded plastic over passivated chip
- Terminals: Solder Plated, solderable per MIL-STD-750, Method 2026
- Weight: 21 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Note 1)
mm
PARAMETER
SYMBOL
TSOD1F TSOD1F TSOD1F TSOD1F TSOD1F TSOD1F
1HM
FB
70
100
100
2HM
FD
200
200
4HM
FG
400
280
400
1
25
1.3
5
50
150
4
180
-55 to +150
250
500
6HM
FJ
600
420
600
8HM
FK
800
560
800
10HM
FM
1000
700
1000
en
d
140
ed
UNIT
V
V
V
A
A
V
μA
ns
pF
K/W
°C
Version: B1606
V
RRM
V
RMS
V
DC
I
(AV)
Maximum instantaneous forward voltage at 1A (Note 2)
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (Note 3)
Typical junction capacitance (Note 4)
Typical thermal resistance (Note 5)
No
Junction and Storage Temperature Range
Note 1: Averaged over any 20ms period.
Note 2: Pulse test: 300μs pulse width, 1% duty cycle.
Note 3: Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A
Note 4: Measured at 1.0MHz and applied average voltage of 4.0V DC.
Note 5: Thermal resistance junction to ambient, 6.0 mm
2
copper pads to each terminal.
tR
V
F
I
R
t
rr
C
J
R
θJA
T
J
, T
STG
T
A
=25°C
T
A
=125°C
Peak forward surge current 8.3ms single half sine wave
superimposed on rated load
eco
I
FSM
TSOD1F1HM - TSOD1F10HM
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig. 1 FORWARD DERATING CURVE
1.2
AVERAGE FORWARD CURRENT (A)
1
0.8
0.6
Fig. 2 TYPICAL FORWARD CHARACTERISTICS
100
FORWARD CURRENT (A)
10
1
0.4
0.2
0
0
30
60
90
120
150
RESISTIVE OR
INDUCTIVE LOAD
0.1
0.01
0.6
en
d
0.7
0.8
0.9
10
9
8
7
ed
1.0
1.1
0
5
10
15
20
Pulse Width=300μs
1% Duty Cycle
1.2
1.3
1.4
1.5
1.6
Fig.2
AMBIENT TEMPERATURE (
°
C)
FORWARD VOLTAGE (V)
Fig. 3
Fig. 3 TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (μA)
100
10
CAPACITANCE (pF)
eco
tR
T
J
=125°C
1
0.1
No
T
J
=25°C
0.01
0
20
40
60
80
100
120
mm
6
5
4
3
2
1
0
Fig. 4 TYPICAL JUNCTION CAPACITANCE
140
25
30
35
40
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
REVERSE VOLTAGE (V)
Version: B1606
TSOD1F1HM - TSOD1F10HM
Taiwan Semiconductor
Small Signal Product
No
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: B1606
tR
eco
mm
en
d
ed
Embedded System
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