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BSS138N L6327

Description
MOSFET N-Ch 60V 230mA SOT-23-3
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size457KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS138N L6327 Overview

MOSFET N-Ch 60V 230mA SOT-23-3

BSS138N L6327 Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologyGaN
Installation styleSMD/SMT
Package/boxSOT-23-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage60 V
Id-continuous drain current230 mA
Rds On - drain-source on-resistance3.5 Ohms
Vgs - gate-source voltage20 V
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation360 mW
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationReel
high1.1 mm
length2.9 mm
productMOSFET Small Signal
seriesBSS138
Transistor type1 N-Channel
width1.3 mm
Fall time3 ns
Rise Time3 ns
Factory packaging quantity3000
Typical shutdown delay time6.7 ns
Typical switch-on delay time2.3 ns
unit weight8 mg
BSS138N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
60
3.5
0.23
V
Ω
A
PG-SOT-23
Type
BSS138N
BSS138N
Parameter
Package
PG-SOT-23
PG-SOT-23
Tape and Reel
H6327: 3000
H6433: 10000
Marking
SKs
SKs
Value
0.23
0.18
0.92
Unit
A
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Continuous drain current
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.23 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
JESD22-A114 (HBM)
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
Class 0 (<250V)
0.36
-55 ... 150
55/150/56
V
W
°C
Rev. 2.86
page 1
2012-04-17

BSS138N L6327 Related Products

BSS138N L6327 BSS138N L6433
Description MOSFET N-Ch 60V 230mA SOT-23-3 MOSFET N-Ch 60V 230mA SOT-23-3
Maker Infineon Infineon
Product Category MOSFET MOSFET
technology GaN GaN
Installation style SMD/SMT SMD/SMT
Package/box SOT-23-3 SOT-23-3
Number of channels 1 Channel 1 Channel
Transistor polarity N-Channel N-Channel
Vds - drain-source breakdown voltage 60 V 60 V
Id-continuous drain current 230 mA 230 mA
Rds On - drain-source on-resistance 3.5 Ohms 3.5 Ohms
Vgs - gate-source voltage 20 V 20 V
Minimum operating temperature - 55 C - 55 C
Maximum operating temperature + 150 C + 150 C
Pd-power dissipation 360 mW 360 mW
Configuration Single Single
channel mode Enhancement Enhancement
high 1.1 mm 1.1 mm
length 2.9 mm 2.9 mm
product MOSFET Small Signal MOSFET Small Signal
series BSS138 BSS138
Transistor type 1 N-Channel 1 N-Channel
width 1.3 mm 1.3 mm
Fall time 3 ns 3 ns
Rise Time 3 ns 3 ns
Factory packaging quantity 3000 10000
Typical shutdown delay time 6.7 ns 6.7 ns
Typical switch-on delay time 2.3 ns 2.3 ns
unit weight 8 mg 8 mg
Encapsulation Reel Reel
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