TSSE3H45 - TSSE3H60
Taiwan Semiconductor
3A, 45V - 60V Trench Schottky Rectifier
FEATURES
●
●
●
●
●
●
Patented Trench Schottky technology
Excellent high temperature stability
Low forward voltage
Lower power loss/ high efficiency
High forward surge capability
Compliant to RoHS Directive 2011/65/EU and in accordance
to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
KEY PARAMETERS
PARAMETER
VALUE
3
45 - 60
60
150
SOD-123HE
Single die
UNIT
A
V
A
°C
APPLICATIONS
● Trench Schottky barrier rectifier is designed for high
frequency miniature switched mode power supplies such as
adapters, lighting and on-board DC/DC converters
MECHANICAL DATA
● Case: SOD-123HE
● Molding compound meets UL 94V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
●
●
●
●
●
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.022g (approximately)
SOD-123HE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Forward current
Surge peak forward current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
RMS
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
TSSE3H45
E3H45
45
32
3
60
-55 to +150
-55 to +150
TSSE3H60
E3H60
60
42
V
V
A
A
°C
°C
UNIT
1
Version:B1707
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
SYMBOL
R
ӨJL
LIMIT
20
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TSSE3H45
Forward voltage per diode
(1)
CONDITIONS
I
F
= 3A, T
J
= 25°C
I
F
= 3A, T
J
=125°C
I
F
= 3A, T
J
= 25°C
I
F
= 3A, T
J
=125°C
T
J
= 25°C
T
J
= 125°C
SYMBOL
TYP
0.47
0.40
0.50
0.43
MAX
0.57
0.50
0.60
0.53
100
25
UNIT
V
V
V
V
μA
mA
V
F
TSSE3H60
(2)
Reverse current @ rated V
R
per diode
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
I
R
-
-
ORDERING INFORMATION
PART NO.
TSSE3Hxx
(Note 1, 2)
PART NO.
SUFFIX
H
PACKING
CODE
RV
RQ
PACKING CODE
SUFFIX
G
PACKAGE
SOD-123HE
SOD-123HE
PACKING
3,000 / 7" Reel
10,000 / 13" Reel
Notes:
1. "x" defines voltage from 45V (TSSE3H45) to 60V (TSSE3H60)
2.
Whole series with green compound (halogen-free)
EXAMPLE P/N
EXAMPLE P/N
TSSE3H45HRVG
PART NO.
TSSE3H45
PART NO.
SUFFIX
H
PACKING
CODE
RV
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:B1707
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.2 Typical Junction Capacitance
1000
Fig.1 Forward Current Derating Curve
ORWARD CURRENT DERATING CURVE
4
AVERAGE FORWARD CURRENT (A)
3
CAPACITANCE (pF)
Heat sink
5mm x 5mm
Cu pad test board
2
100
1
0
25
10
100
o
f=1.0MHz
Vslg=50mVp-p
50
75
125
150
0.1
1
10
100
LEAD TEMPERATURE ( C)
FORWARD VOLTAGE (V)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
100
Fig.4 Typical Forward Characteristics
10
TSSE3H45
10
1
0.1
0.01
0.001
T
J
0.0001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
=25
o
C
T
J
=150
o
C
T
J
=125
o
C
TSSE3H45
UF1DLW
T
J
=125°C
10
1
T
J
=100
o
C
1
0.1
T
J
=150
o
C
0.01
0.1
T
J
=125
o
C
T
J
=100
o
C
0.3
0.4
0.5
0.6
T
J
=25
o
C
0.7
0.8
T
J
=25°C
Pulse width
0.9
1
1.1
1.2
0.001
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
FORWARD VOLTAGE (V)
3
Version:B1707
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
Fig.6 Typical Forward Characteristics
INSTANTANEOUS FORWARD CURRENT (A)
100
TSSE3H60
10
T
J
=150
o
C
T
J
=125
o
C
1
100
10
TSSE3H60
UF1DLW
T
J
=125°C
10
1
0.1
1
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
0.3
0.4
0.5
0.6
o
T
J
=25°C
0.1
T
J
=100
o
C
0.01
T
J
0.001
10
20
30
40
50
60
70
80
90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
=25
o
C
0.01
0.1
0.001
Pulse width
1
1.1
1.2
0.01
0.7
T
J
=25 C
0.9
0.8
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
4
Version:B1707
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
SOD-123HE
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min
1.65
2.60
0.85
0.75
0.10
0.55
0.35
1.90
1.35
0.95
3.50
0.35
Max
1.95
3.00
1.15
0.85
0.20
0.75
0.55
2.30
1.55
1.25
3.90
0.55
Unit (inch)
Min
0.065
0.102
0.033
0.030
0.004
0.022
0.014
0.075
0.053
0.037
0.138
0.014
Max
0.077
0.118
0.045
0.033
0.008
0.030
0.022
0.091
0.061
0.049
0.154
0.022
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.40
2.40
0.70
0.90
1.40
Unit (inch)
0.055
0.094
0.028
0.035
0.055
MARKING DIAGRAM
P/N
YW
F
= Marking Code
= Date Code
= Factory Code
5
Version:B1707
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