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TSSE3H60HRVG

Description
Schottky Diodes and Rectifiers Trench Schottky 3amp 60v
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Schottky diode rectifier   
File Size298KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSSE3H60HRVG Overview

Schottky Diodes and Rectifiers Trench Schottky 3amp 60v

TSSE3H60HRVG Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategorySchottky diodes and rectifiers
productSchottky Rectifiers
Installation styleSMD/SMT
Package/boxSOD-123HE-2
If - forward current3 A
Vrrm - Repetitive reverse voltage60 V
Vf - forward voltage0.5 V
Ifsm - Forward surge current60 A
ConfigurationSingle
technologySi
Ir - 反向电流 100 uA
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
qualificationsAEC-Q101
EncapsulationReel
Factory packaging quantity3000
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
3A, 45V - 60V Trench Schottky Rectifier
FEATURES
Patented Trench Schottky technology
Excellent high temperature stability
Low forward voltage
Lower power loss/ high efficiency
High forward surge capability
Compliant to RoHS Directive 2011/65/EU and in accordance
to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
KEY PARAMETERS
PARAMETER
VALUE
3
45 - 60
60
150
SOD-123HE
Single die
UNIT
A
V
A
°C
APPLICATIONS
● Trench Schottky barrier rectifier is designed for high
frequency miniature switched mode power supplies such as
adapters, lighting and on-board DC/DC converters
MECHANICAL DATA
● Case: SOD-123HE
● Molding compound meets UL 94V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.022g (approximately)
SOD-123HE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Forward current
Surge peak forward current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
RMS
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
TSSE3H45
E3H45
45
32
3
60
-55 to +150
-55 to +150
TSSE3H60
E3H60
60
42
V
V
A
A
°C
°C
UNIT
1
Version:B1707

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Product Category Schottky diodes and rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky diodes and rectifiers Schottky diodes and rectifiers
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