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S29GL512P13FFI010

Description
1G X 1 FLASH 3V PROM, 110 ns, PDSO56
Categorystorage   
File Size981KB,71 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Download Datasheet Parametric View All

S29GL512P13FFI010 Overview

1G X 1 FLASH 3V PROM, 110 ns, PDSO56

S29GL512P13FFI010 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals56
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage2.7 V
Rated supply voltage3 V
maximum access time110 ns
Processing package description20 X 14 MM, MO-142EC, TSOP-56
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH
surface mountYes
Terminal formGULL WING
Terminal spacing0.5000 mm
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width1
organize1G X 1
storage density1.07E9 deg
operating modeASYNCHRONOUS
Number of digits1.07E9 words
Number of digits1G
Memory IC typeFLASH 3V PROM
serial parallelPARALLEL
S29GL-P MirrorBit
TM
Flash Family
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gigabit, 512 Megabit , 256 Megabit and 128 Megabit
3.0 Volt-only Page Mode Flash Memory featuring
90 nm MirrorBit Process Technology
S29GL-P MirrorBit
TM
Flash Family Cover Sheet
Data Sheet
(Advance Information)
Notice to Readers:
This document contains information on one or more products under development at
Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product
without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this
proposed product without notice.
Publication Number
S29GL-P_00
Revision
A
Amendment
3
Issue Date
November 21, 2006

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