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Datasheet> All Categories > Discrete semiconductor> diode> RU30A
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RU30A

Description
2 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size21KB，1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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RU30A Overview

2 A, SILICON, RECTIFIER DIODE

RU30A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSANKEN
Parts packaging codeAXIAL DIODE
package instructionO-XALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current2 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.4 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
( ) is with
Heatsink
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
F
(V)
max
I
F
(A)
I
R
(µA)
I
R
(H)
(µA)
Others
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
t
rr
Œ
(µs)
I
F
/
I
RP
(mA)
t
rr

(µs)
I
F
/
I
RP
(mA)
Rth (j- )
(°C/ W)
Mass
Fig.
(g)
V
R
= V
RM
V
R
= V
RM
max
Ta =100°C max
RU 3M
RU 3AM
RU 3YX
RU 30Z
RU 30
RU 30A
400
1.5
600
100
200
400
2.0
600
200
0.95 2.0
2.0
1.5 (3.5)
50
–40 to +150
80
0.97 3.5
10
300
0.4
100/100
10/10
0.18
100/200
10/20
10
1.0
B
50
1.1
1.5
10
350
0.4
10/10
0.18
10/20
12
0.6
A
0.95 2.0
10
300
0.2
10/10
0.08
10/20
12
0.6
RU 3M, 3AM
I
FSM
(A)
2.0
I
F(AV)
(A)
Ta—I
F(AV)
Derating
L =10mm
L =10mm
V
F
—I
F
Characteristics
(Typical)
20
10
Forward Current I
F
(A)
50
I
FMS
Rating
I
FSM
(A)
Average Forward Current
1
Peak Forward Surge Current
1.5
P.C.B
Solder
180•100•1.6t
10mm
Copper Foil
40
20ms
30
0.1
0.1
T
a
= 150ºC
100ºC
60ºC
25ºC
20
0.5
0.01
10
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.1
0.3
0.5
0.7
0.9
Forward Voltage V
F
(V)
1.1
0
1
5
10
Overcurrent Cycles
50
RU 3YX
2.0
I
F(AV)
(A)
Ta—I
F(AV)
Derating
L =10mm
L =10mm
V
F
—I
F
Characteristics
(Typical)
I
FSM
(A)
I
FMS
Rating
50
I
FSM
(A)
10
1.5
Peak Forward Surge Current
P.C.B
Solder
180•100•1.6t
10mm
Copper Foil
Forward Current I
F
(A)
40
20ms
1
Average Forward Current
30
1.0
0.1
T
a
= 150ºC
100ºC
50ºC
25ºC
20
0.5
0.01
10
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.1
0.3
0.5
0.7
Forward Voltage V
F
(V)
0.9
0
1
5
10
Overcurrent Cycles
50
RU 30 series
3.5
I
F(AV)
(A)
Ta—I
F(AV)
Derating
20•20•1t Cu
V
F
—I
F
Characteristics
(Typical)
I
FSM
(A)
I
FMS
Rating
200
180
160
140
120
100
80
60
40
20
I
FSM
(A)
50
10
3.0
5mm
5mm
20ms
Average Forward Current
2.0
1.5
1.0
0.5
0
0
RU 30
RU 30A
Wi
tho
ut
He
Peak Forward Surge Current
2.5
Forward Current I
F
(A)
1
RU 30Z
RU 30
RU 30A
ats
0.1
T
a
= 150ºC
100ºC
60ºC
25ºC
0.3
0.5
0.7
0.9
1.0
Forward Voltage V
F
(V)
1.2
ink
ats
He
th
Wi
ink
RU 30Z
0.01
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.1
0
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
0.98
±0.05
Fig.
B
1.2
±0.05
Cathode Mark
Cathode Mark
62.5
±0.7
4.0
±0.2
62.5
±0.7
7.2
±0.2
9.1
±0.2
5.2
±0.2
35

RU30A Related Products

RU30A RU30Z RU3AM RU3YX RU3M RU30
Description 2 A, SILICON, RECTIFIER DIODE 3.5 A, SILICON, RECTIFIER DIODE 1.5 A, SILICON, RECTIFIER DIODE 2 A, SILICON, RECTIFIER DIODE 1.5 A, SILICON, RECTIFIER DIODE 2 A, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible conform to incompatible conform to incompatible
Maker SANKEN SANKEN SANKEN SANKEN SANKEN SANKEN
Parts packaging code AXIAL DIODE AXIAL DIODE AXIAL DIODE AXIAL DIODE AXIAL DIODE AXIAL DIODE
package instruction O-XALF-W2 O-XALF-W2 AXIAL PACKAGE-2 O-XALF-W2 AXIAL PACKAGE-2 O-XALF-W2
Contacts 2 2 2 2 2 2
Reach Compliance Code unknow unknow unknow unknow unknow unknow
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.95 V 0.97 V 1.1 V 0.95 V 1.1 V 0.95 V
JESD-30 code O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
Maximum non-repetitive peak forward current 200 A 80 A 50 A 50 A 50 A 200 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 140 °C 150 °C 150 °C
Maximum output current 2 A 1.5 A 1.5 A 2 A 1.5 A 2 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 200 V 600 V 100 V 400 V 400 V
Maximum reverse recovery time 0.4 µs 0.18 µs 0.18 µs 0.08 µs 0.18 µs 0.18 µs
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
ECCN code EAR99 EAR99 EAR99 - EAR99 -
JESD-609 code e0 e0 - e0 - e0
Minimum operating temperature -40 °C -40 °C -40 °C - -40 °C -40 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -

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