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Datasheet> All Categories > Discrete semiconductor> diode> RU2M
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RU2M

Description
1.1 A, 400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size16KB，1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
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RU2M Overview

1.1 A, 400 V, SILICON, RECTIFIER DIODE

RU2M Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSANKEN
Parts packaging codeAXIAL DIODE
package instructionO-XALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current20 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.1 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.18 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
F
(V)
max
I
F
(A)
I
R
I
R
(H)
(µA)
(µA)
V
R
= V
RM
V
R
= V
RM
max
Ta =100°C max
Others
Tj
(°C)
t
rr
Œ
(µs)
I
F
/
I
RP
(mA)
t
rr

(µs)
I
F
/
I
RP
(mA)
Rth (j- )
(°C/ W)
Mass
Fig.
(g)
RU 1
RU 1A
RU 1B
RU 1C
RU 2Z
RU 2
RU 2B
RU 2C
RU 2M
RU 2AM
400
600
800
1000
200
600
800
1000
400
600
0.8
1.1
20
1.2
1.1
10
300
0.4
10/10
0.18
10/20
15
0.4
1.0
20
0.2
–40 to +150
1.5
1.0
10
300
0.4
10/10
0.18
10/20
15
0.4
0.25
15
2.5
3.0
A
0.25
10
200
0.4
10/10
0.18
10/20
15
0.4
RU 1 series
0.25
I
F(AV)
(A)
Ta—I
F(AV)
Derating
2.0
V
F
—I
F
Characteristics
(Typical)
15
I
FMS
Rating
I
FSM
(A)
I
FSM
(A)
Forward Current I
F
(A)
0.2
1.0
13
0º
C
20ms
Peak Forward Surge Current
Average Forward Current
Ta
=
10
0º
0.15
0.5
10
C
25
ºC
0.1
5
0.15
0.1
0.05
0.6
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.7
0.8
0.9
1.0
Forward Voltage V
F
(V)
1.1
0
1
5
10
Overcurrent Cycles
50
RU 2 series
1.0
I
F(AV)
(A)
Ta—I
F(AV)
Derating
5.0
V
F
—I
F
Characteristics
(Typical)
20
I
FMS
Rating
I
FSM
(A)
I
FSM
(A)
Forward Current I
F
(A)
0.8
20ms
15
=1
Average Forward Current
1.0
0.5
Ta
10
0º
C
0.6
Peak Forward Surge Current
30
ºC
ºC
0.4
25
10
5
0.2
0.1
0.05
0.5
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.6
0.7 0.8 0.9 1.0 1.1
Forward Voltage V
F
(V)
1.2
0
1
5
10
Overcurrent Cycles
50
RU 2M series
Ta—I
F(AV)
Derating
1.5
I
F(AV)
(A)
V
F
—I
F
Characteristics
(Typical)
10
I
FSM
(A)
20
I
FMS
Rating
I
FSM
(A)
Forward Current I
F
(A)
1.2
20ms
1
Peak Forward Surge Current
15
Average Forward Current
0.9
0.1
T
a
= 150ºC
100ºC
60ºC
25ºC
10
0.6
0.01
5
0.3
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.1
0.3
0.5
0.7
0.9
Forward Voltage V
F
(V)
1.1
0
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
0.78
±0.05
Cathode Mark
62.5
±0.7
7.2
±0.2
4.0
±0.2
33

RU2M Related Products

RU2M RU1 RU1C RU1A RU1B RU2Z RU2C RU2B RU2AM RU2
Description 1.1 A, 400 V, SILICON, RECTIFIER DIODE 0.25 A, SILICON, SIGNAL DIODE 0.2 A, 1000 V, SILICON, SIGNAL DIODE 0.25 A, SILICON, SIGNAL DIODE 0.25 A, 800 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 0.8 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1.1 A, SILICON, RECTIFIER DIODE 1 A, 600 V, SILICON, SIGNAL DIODE
Is it lead-free? Lead free - Lead free Lead free Lead free Lead free - Lead free Lead free Lead free
Is it Rohs certified? conform to - conform to conform to conform to conform to - conform to conform to conform to
Maker SANKEN - - SANKEN SANKEN SANKEN - SANKEN SANKEN SANKEN
Parts packaging code AXIAL DIODE - AXIAL DIODE AXIAL DIODE AXIAL DIODE AXIAL DIODE - AXIAL DIODE AXIAL DIODE AXIAL DIODE
package instruction O-XALF-W2 - O-XALF-W2 AXIAL PACKAGE-2 O-XALF-W2 O-XALF-W2 - O-XALF-W2 AXIAL PACKAGE-2 O-XALF-W2
Contacts 2 - 2 2 2 2 - 2 2 2
Reach Compliance Code unknow - unknow unknow unknow unknow - unknow unknow unknow
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON SILICON - SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V - 3 V 2.5 V 2.5 V 1.5 V - 1.5 V 1.2 V 1.5 V
JESD-30 code O-XALF-W2 - O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 - O-XALF-W2 O-XALF-W2 O-XALF-W2
Maximum non-repetitive peak forward current 20 A - 15 A 15 A 15 A 20 A - 20 A 20 A 20 A
Number of components 1 - 1 1 1 1 - 1 1 1
Number of terminals 2 - 2 2 2 2 - 2 2 2
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C - -40 °C -40 °C -40 °C -40 °C - -40 °C -40 °C -40 °C
Maximum output current 1.1 A - 0.2 A 0.25 A 0.25 A 1 A - 1 A 1.1 A 1 A
Package body material UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND - ROUND ROUND ROUND ROUND - ROUND ROUND ROUND
Package form LONG FORM - LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V - 1000 V 600 V 800 V 200 V - 800 V 600 V 600 V
Maximum reverse recovery time 0.18 µs - 0.4 µs 0.4 µs 0.4 µs 0.4 µs - 0.4 µs 0.18 µs 0.4 µs
surface mount NO - NO NO NO NO - NO NO NO
Terminal form WIRE - WIRE WIRE WIRE WIRE - WIRE WIRE WIRE
Terminal location AXIAL - AXIAL AXIAL AXIAL AXIAL - AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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