(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Storage Temperature
Per device
Per diode
I
FRM
Per device
Per diode
I
FSM
T
J
T
stg
40
20
125
−55 to +150
−55 to +150
A
°C
°C
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
20
10
A
Value
100
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Typical Thermal Resistance per Device (Note 1)
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
Value
1.5
69.5
Unit
°C/W
°C/W
1. Assumes 150 mm
2
1 oz. copper bond pad, on a FR4 board.
ELECTRICAL CHARACTERISTICS
(Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(V
R
= 70 V, T
J
= 25°C)
(V
R
= 70 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Diode Capacitance
(Rated dc Voltage, T
J
= 25°C)
C
d
75
−
pF
I
R
2
2
8
5.5
42
15
Symbol
v
F
0.58
0.74
0.53
0.63
−
0.78
−
0.66
mA
mA
mA
mA
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%
ORDERING INFORMATION
Device
NRTSV20H100CTG
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
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2
NRTSV20H100CT
TYPICAL CHARACTERISTICS
I
F
, INSTANTANEOUS FORWARD CURRENT
(A)
100.0
T
J
= 125°C
100.0
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
J
= 125°C
10.0
T
J
= 150°C
10.0
T
J
= 150°C
T
J
= −55°C
T
J
= 25°C
T
J
= 85°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.0
1.0
T
J
= −55°C
T
J
= 25°C
0.1
T
J
= 85°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 1.8
0.1
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
I
F
, INSTANTANEOUS REVERSE CURRENT (A)
I
F
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
10
20
30
40
50
60
70
80
90 100
V
F
, INSTANTANEOUS REVERSE VOLTAGE (V)
T
J
= 25°C
T
J
= 85°C
T
J
= 150°C
T
J
= 125°C
1.E−01
T
J
= 150°C
T
J
= 125°C
1.E−02
1.E−03
T
J
= 85°C
1.E−04
1.E−05
T
J
= 25°C
1.E−06
10
20
30
40
50
60
70
80
90 100
V
F
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
20
1,000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
18
16
14
12
10
8
6
4
2
Square Wave
dc
R
qJC
= 2.2°C/W
100
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
0
0
20
40
60
80
100
120
140
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Leg
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3
NRTSV20H100CT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
35
P
F(AV)
, AVERAGE FORWARD POW-
ER DISSIPATION (W)
dc
30
25
20
15
10
5
0
0
R
qJC
= 1.5°C/W
20
40
60
80
100
120
140
Square Wave
25
I
PK
/I
AV
= 10
20
I
PK
/I
AV
= 5
15
I
PK
/I
AV
= 20
10
dc
5
Square Wave
T
J
= 150°C
0
0
2
4
6
8
10
12
14
T
C
, CASE TEMPERATURE (°C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 7. Current Derating, per Device
Figure 8. Forward Power Dissipation
100
50%
10
R(t), (°C/W)
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (sec)
1
10
100
1000
Figure 9. Typical Transient Thermal Response
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NRTSV20H100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 6:
PIN 1.
2.
3.
4.
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