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RM4606S8-T

Description
MOSFET SOP-8 MOSFET
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size423KB,11 Pages
ManufacturerRectron
Environmental Compliance
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RM4606S8-T Overview

MOSFET SOP-8 MOSFET

RM4606S8-T Parametric

Parameter NameAttribute value
MakerRectron
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxSOP-8
Number of channels2 Channel
Transistor polarityN-Channel, P-Channel
Vds - drain-source breakdown voltage30 V
Id-continuous drain current6.5 A, 7 A
Rds On - drain-source on-resistance30 mOhms, 33 mOhms
Vgs th-gate-source threshold voltage1 V, 2.5 V
Vgs - gate-source voltage20 V
Qg-gate charge13 nC, 9.2 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation2 W
ConfigurationDual
channel modeEnhancement
EncapsulationReel
Transistor type1 N-Channel, 1 P-Channel
Forward transconductance - minimum15 S, 10 S
Fall time3.5 ns, 7 ns
Rise Time2.5 ns, 5.5 ns
Factory packaging quantity2500
Typical shutdown delay time14.5 ns, 19 ns
Typical switch-on delay time4.5 ns, 7.5 ns
RM4606S8
N and P-Channel Enhancement Mode Power MOSFET
Description
The RM4606S8 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
N-channel
P-channel
Schematic diagram
General Features
N-Channel
V
DS
= 30V,I
D
=6.5A
R
DS(ON)
< 30m
P-Channel
V
DS
= -30V,I
D
= -7A
R
DS(ON)
< 33m
@ V
GS
=-10V
Marking and pin assignment
@ V
GS
=10V
High power and current handing capability
Lead free product is acquired
Surface mount package
SOP-8
top view
Package Marking and Ordering Information
Device Marking
4606
Device
RM4606S8
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T
A
=25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
unless otherwise noted)
Symbol
V
DS
V
GS
N-Channel
30
±20
6.5
P-Channel
-30
±20
-7
Unit
V
V
A
T
A
=25
T
A
=70
I
D
5.4
I
DM
30
2.0
-55 To 150
-5.8
-30
2.0
-55 To 150
A
W
Maximum Power Dissipation
T
A
=25
P
D
T
J
,T
STG
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Ambient
(Note2)
(Note2)
R
R
JA
JA
N-Ch
P-Ch
62.5
62.5
/W
/W
2017-01
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